Substrate film for semiconductor-manufacturing tapes

Abstract

The substrate film (1) for semiconductor manufacturing tape has at least a functional layer (2), the functional layer (2) contains polybutene, ionomer and olefin elastomer, the heat shrinkage rate when heated at 110°C for 15 minutes is more than -0.5% and less than 4.5%, the ratio of stress (at 5% elongation) to stress (at 40% elongation) at -15°C is less than 0.90, and the stress (at 20% elongation) at -15°C is more than 10 MPa and less than 40 MPa. A substrate film (1) for semiconductor-manufacturing tape comprises at least a functional layer (2). -15℃ is less than 0.90. The stress (at 20% elongation) at -15℃ is 10 MPa or more and 40 MPa or less.

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