A process for metallisation and bonding of silicon carbide surfaces

Abstract

This invention provides a process for forming a nanoparticle seeded surface on a silicon carbide (SiC) surface. The process includes the following steps: a. providing a silicon carbide surface; b. optionally pretreating the silicon carbide surface; c. hydrophilizing the silicon carbide surface using a hydrophilic agent to form a hydrophilic silicon carbide surface; d. contacting the hydrophilic silicon carbide surface with a solution containing one or more monovalent metal ions; e. reducing the one or more monovalent metal ions by applying energy to the one or more monovalent metal ions and the hydrophilic silicon carbide surface, thereby forming a metal nanoparticle on the hydrophilic silicon carbide surface; thereby providing the nanoparticle seeded silicon carbide surface. none

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