Sulfonium salt, chemically amplified resist composition, and pattern forming process

TW202637543APending Publication Date: 2026-09-16SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW115102103
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-24
Filing Date
2026-01-20
Publication Date
2026-09-16

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Abstract

A sulfonium salt consisting of a polymerizable group-free fluoroalkanesulfonic acid anion and a sulfonium cation containing a pentafluorosulfanyl group and an acid labile group of tertiary / secondary ether structure, tertiary / secondary carbonate structure or acetal structure is provided. A chemically amplified resist composition comprising the sulfonium salt as a photoacid generator has a high sensitivity and resolution, and forms a resist film with improved lithography properties including LWR, CDU, EL and DOF as well as collapse resistance.
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