Method and apparatus for forming a metal-containing layer on a semiconductor substrate, composition configured for forming a metal containing film and semiconductor device structure

TW202637570APending Publication Date: 2026-09-16ASM IP HLDG BV
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Patent Information

Application Number
TW114148051
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-14
Filing Date
2025-12-09
Publication Date
2026-09-16

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Abstract

Disclosed herein is a method and a system for forming a metal-containing layer on a semiconductor substrate using a metal precursor that comprises a phosphonium ylide ligand. Also disclosed is a composition comprising the metal precursor and semiconductor device structure that comprises the metal-containing layer.
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