Bismuth films targeting EUV photolithography applications

Abstract

Methods for making positive and negative tone photoresists are provided. The methods comprise obtaining a substrate comprises a bismuth and contacting the substrate with a precursor compound comprises a bismuth coordinated to at least one ligand to form a bismuth-containing film on a surface of the substrate. The at least one ligand comprises an oxygen or a sulfur. A portion of the bismuth-containing film is photo-exposed using extreme ultraviolet light to form a photo-exposed surface portion and a non-photo-exposed surface portion. To form a positive tone photoresist, the substrate is contacted with a solvent to remove the photo-exposed surface portion. To form a negative tone photoresist, the substrate is contacted with a solvent to remove the non-photo-exposed surface portion.

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