Chemical mechanical polishing slurry
TW202637789APending Publication Date: 2026-09-16ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Patent Information
- Application Number
- TW114150449
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-31
- Filing Date
- 2025-12-22
- Publication Date
- 2026-09-16
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Figure TWG2TA001076874_001 
Figure TWG2TA001076874_002
Abstract
The invention provides a chemical mechanical polishing slurry for backside copper exposure in through-silicon via (TSV) processes, the polishing solution comprising abrasive particles, organic acid, organic amine, azole-based compound, non-ionic surfactant, and oxidizer. The slurry has high single-crystal silicon removal rate and tunable copper removal rate, which can effectively reduce copper contamination on the silicon surface after polishing.
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