Etching composition, etching method, and method for manufacturing semiconductor substrate
TW202637814APending Publication Date: 2026-09-16TOKYO OHKA KOGYO CO LTD
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Patent Information
- Application Number
- TW114150503
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-23
- Filing Date
- 2025-12-22
- Publication Date
- 2026-09-16
Abstract
The present invention provides an etching composition, an etching method, and a method for manufacturing a semiconductor substrate. The etching composition contains (A) an oxidant, (B) a compound or a salt thereof capable of releasing fluoride ions, and (C) a nonionic surfactant selected from the group consisting of a compound (c1) having a specific structure and a compound (c2) having a specific structure.
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