Methods of manufacturing semiconductor devices

TW202637874APending Publication Date: 2026-09-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW114138490
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-13
Filing Date
2025-10-07
Publication Date
2026-09-16

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Abstract

Methods of manufacturing semiconductor devices are described. The methods include depositing a molybdenum silicide layer directly on a substrate; depositing an interfacial layer directly on the molybdenum silicide layer; and depositing a metal nitride layer directly on the interfacial layer. The interfacial layer includes a metal silicide having a formula of MSix, where M is a metal and x is an integer in a range of from
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