Programmed precursor waveform for silicide formation in 3D dram devices

Abstract

A method of forming a metal silicide layer in a semiconductor structure includes performing a silicide deposition process in a processing chamber, in which a metal silicide layer is selectively formed on silicon surfaces within an opening formed in a semiconductor structure, inner surfaces of the opening comprising the silicon surfaces and dielectric surfaces, the silicide deposition process including diverting a metal‑containing precursor from a gas source to a vacuum pump coupled to the processing chamber for a first time duration, and subsequent to the first time duration, delivering the metal‑containing precursor from the gas source to the processing chamber.

Images