Semiconductor processing systems including process modules and gas delivery assemblies configured for performing concurrent epitaxial deposition of material layers

Abstract

A semiconductor processing system configured for performing concurrent epitaxial deposition of material layers is disclosed. The system includes a process module with a first and second chamber body, each having upper and lower walls extending between injection and exhaust chamber flanges. The gas delivery system comprises sources of gas and additional gas, with gas conduits fluidly coupled to the chamber bodies. A gas manifold with input and output conduits directs the additional gas to the chamber bodies, controlled by flow controllers. The chamber bodies are laterally separated and positioned adjacent to each other on either side of a central plane, facilitating efficient concurrent deposition processes.

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