Crystal growth methods and crystal growth devices based on physical vapor transport

Abstract

The present disclosure may disclose a crystal growth method and crystal growth device based on physical vapor transport. The crystal growth device includes a first crucible, a second crucible, a heating assembly, and a driving assembly. The first crucible has a first inner cavity for containing material. The second crucible has a second inner cavity and a top wall. The second inner cavity communicates with the first inner cavity. The top wall at least partially covers the axial top end of the first crucible, and a seed crystal mounting area is provided on the side of the top wall facing the first inner cavity. The heating assembly is used to heat at least the first crucible. The driving assembly is drively connected to the first crucible. The driving assembly drives the first crucible to move along the axial direction of the first crucible at least away from the seed crystal mounting area.

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