Epitaxial growth method from nucleation layer

Abstract

This invention relates to an epitaxial growth method starting from a nucleation layer. A stack (1) is provided, which sequentially comprises, along a direction called stacking direction (Z): a substrate (10), preferably silicon; an insulating layer (20); and a layer containing a semiconductor, called a nucleation layer (30). The insulating layer (20) has a portion not covered by the nucleation layer (30), called an exposed portion (25). At least a portion of the exposed portion (25) of the insulating layer is then roughened, called a roughened portion (26), and epitaxial growth is then performed starting from the nucleation layer (30).

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