Manufacturing methods of silicon carbide polycrystalline substrates, silicon carbide laminated substrates, and silicon carbide laminated substrates

TW202637909APending Publication Date: 2026-09-16SUMITOMO METAL MINING CO LTD
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Patent Information

Application Number
TW114147238
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-28
Filing Date
2025-12-03
Publication Date
2026-09-16

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Abstract

The manufacturing yield of SiC laminated substrates is improved. A bonding surface for bonding with a SiC single-crystal substrate is provided, characterized in that the lamination defect density of the bonding surface is less than 1.0%.
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