Mask pattern determination method, device, medium, and product

Abstract

The disclosure provides a mask pattern determination method, device, medium, and product, applied in the field of semiconductor technology. The mask pattern determination method determines a target mask pattern based on a plurality of second sampling points. The second sampling points are obtained by performing etch bias correction on a plurality of first sampling points based on the first etch bias data, at the positions corresponding to first sampling points of a first lithography pattern and a first etch pattern. Since the first sampling points can characterize the contour of the first target etch pattern, this disclosure achieves relatively accurate correction of etch bias in curved contours by separately correcting multiple sampling points. Therefore, the embodiments of this disclosure can efficiently complete the design of mask patterns corresponding to curved patterns.

Images