Molecular layer infiltration of photoresists

Abstract

A method for forming a semiconductor device can include forming a first photoresist layer of a first photoresist material on a substrate, performing molecular layer infiltration (MLI) of the first photoresist layer to form a first MLI photoresist layer of a first MLI photoresist material such that the first MLI photoresist material chemically differs from the first photoresist material, forming a second photoresist layer of a second photoresist material on the first MLI photoresist layer, where the second photoresist material differs from the first MLI photoresist material, performing MLI of the second photoresist layer to form a second MLI photoresist layer of a second MLI photoresist material such that the second MLI photoresist material chemically differs from the second photoresist material, and patterning the second MLI photoresist layer and the first MLI photoresist layer using light of a specific waveform, such as extreme ultraviolet light.

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