Memory device

TW202638243APending Publication Date: 2026-09-16KIOXIA CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115102355
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-06-13
Filing Date
2026-01-21
Publication Date
2026-09-16

Smart Images

  • Figure TWG2TA001077083_001
    Figure TWG2TA001077083_001
  • Figure TWG2TA001077083_002
    Figure TWG2TA001077083_002
  • Figure TWG2TA001077083_003
    Figure TWG2TA001077083_003
Patent Text Reader

Abstract

The present invention provides a memory device with improved reliability. According to an embodiment, the memory device of the present invention includes: a first wiring extending along a first direction; a switching element disposed on the first wiring, comprising at least one element selected from silicon (Si), oxygen (O), arsenic (As), thallium (Tl), and boron (B); a variable resistor element disposed on the switching element; and a second wiring extending along a second direction intersecting the first direction and disposed on the variable resistor element.
Need to check novelty before this filing date? Find Prior Art