Non-transitory storage medium, method of processing a semiconductor structure and process technology computer-aided design system

Abstract

In process technology computer-aided design, a simulated three-dimensional after etch inspection (AEI) profile is generated by simulating etching of a semiconductor structure represented by a three-dimensional after-development inspection (ADI) profile using an iterative three-dimensional physical etch simulation. The simulated three-dimensional AEI profile is compared with a desired AEI profile or with an acquired AEI image. The iterative three-dimensional physical etch simulation may be a Particle Monte Carlo (PMC) etch simulation. The iterative three-dimensional physical etch simulation may be a Process Emulation (PE) etch simulation. The generating of the simulated three-dimensional AEI profile may further include simulating trimming of a patterned layer of the semiconductor structure performed by applying an ion beam treatment to the patterned layer. The simulation of the trimming may include modeling mechanical deformation of the patterned layer.

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