Wide terminal resistor

Abstract

A wide terminal resistor includes a carrier, a resistance layer, first and second inner electrodes, an insulating protection layer, and first and second outer electrodes. The resistance layer is disposed on the carrier. The resistance layer includes a resistance functional region, and first and second electrode areas located on two opposite sides of the resistance functional area. The first and second inner electrodes are disposed on the first and second electrode areas. The first inner electrode includes a first body, a first pedestal, and a first bump. The second inner electrode includes a second body, a second pedestal, and a second bump. The first and second bumps are opposite to each other. The insulating protection layer covers the resistance functional area and portions of the first and second inner electrodes. The first outer electrode covers a portion of the insulating protection layer, the first inner electrode, and the first electrode area. The second outer electrode covers another portion of the insulating protection layer, the second inner electrode, and the second electrode area.

Description

Technical Field

[0001] This disclosure relates to a manufacturing technique for an electronic component, and more particularly to a wide-electrode resistor. Prior Technology

[0002] Wide-electrode resistors are designed to shorten the path of current through the resistor, thereby increasing its power handling capacity. Furthermore, the heat generated during resistor operation can be dissipated quickly due to the shorter electrode path.

[0003] Because wide-electrode resistors have wider electrodes, the current flow can vary depending on the location of current or voltage traces on the circuit board. This can lead to discrepancies in resistance measurements after the product is soldered onto the circuit board, due to variations in the product's design.

[0004] Furthermore, during the resistance adjustment process, probes are used to measure the resistance value of resistors, and a physical adjustment is performed simultaneously. The position of the probes can cause measurement deviations. Some resistor designs use fixed probe points to reduce measurement errors. However, even such designs struggle to mitigate resistance deviations caused by misalignment during circuit board soldering. Summary of the Invention

[0005] Therefore, one of the objectives of this disclosure is to provide a wide electrode resistor that can solve the problems of poor accuracy of probe measurement and large error between probe measurement and plate measurement in wide electrode resistors.

[0006] In accordance with the aforementioned objectives of this disclosure, a wide-electrode resistor is proposed, comprising a carrier, a resistive layer, a first inner electrode, a second inner electrode, an insulating protective layer, a first outer electrode, and a second outer electrode. The resistive layer is disposed on the carrier. This resistive layer includes a resistance functional region and a first electrode region and a second electrode region located on opposite sides of the resistance functional region. The first inner electrode is disposed on the first electrode region. The first inner electrode includes a first body and a first bump and a first protrusion sequentially joined to one side of the first body. The second inner electrode is disposed on the second electrode region. The second inner electrode includes a second body and a second bump and a second protrusion sequentially joined to one side of the second body. The second protrusion and the first protrusion are opposite to each other. The insulating protective layer covers the resistance functional region, a portion of the first inner electrode, and a portion of the second inner electrode. The first outer electrode covers a portion of the insulating protective layer, the first inner electrode, and the first electrode region. The second outer electrode covers another portion of the insulating protective layer, the second inner electrode, and the second electrode region, and is opposite to and spaced apart from the first outer electrode.

[0007] According to one embodiment of this disclosure, the resistive layer has two trenches. These two trenches are respectively disposed at two opposite edge regions of the resistance functional region to define the resistance functional region as a wide resistor, a first narrow resistor, and a second narrow resistor connected in parallel. The first narrow resistor and the second narrow resistor are arranged symmetrically on opposite sides of the wide resistor.

[0008] According to one embodiment of this disclosure, the width of the first narrow resistor and the width of the second narrow resistor are 10% to 20% of the width of the resistance functional area, and the width of each trench is 50 μm to 500 μm.

[0009] According to one embodiment of this disclosure, the resistance values ​​of the first narrow resistor and the second narrow resistor are both 2 to 5 times the resistance value of the wide resistor.

[0010] According to one embodiment of this disclosure, the width of the first bump and the width of the second bump are equal to or less than the width of the wide resistor.

[0011] According to one embodiment of this disclosure, the length of the first protrusion protruding from the first body and the length of the second protrusion protruding from the second body are 25 μm to 100 μm. The length of the first convex point protruding from the first convex point and the length of the second convex point protruding from the second convex point are 10 μm to 50 μm. The width of the first convex point and the width of the second convex point are 10 μm to 50 μm.

[0012] According to one embodiment of this disclosure, the width of the resistance functional region is 2 / 5 to 4 / 5 of the width of the wide electrode resistor. The width of the first electrode region and the width of the second electrode region are 80% to 95% of the width of the wide electrode resistor.

[0013] According to one embodiment of this disclosure, the length of the resistance functional area is 3 / 10 to 6 / 10 of the length of the resistive layer, and the lengths of the first body and the second body are 1 / 6 to 2 / 6 of the length of the resistive layer.

[0014] According to one embodiment of this disclosure, both the first protrusion and the second protrusion are arc-shaped structures.

[0015] According to one embodiment of this disclosure, the first inner electrode and the second inner electrode are mirror-symmetrical.

[0016] According to the above embodiment, the first inner electrode and the second inner electrode are respectively provided with a first protrusion and a second protrusion extending towards the resistance functional area. In this way, the electric field and current can be concentrated at the first protrusion and the second protrusion, making the probe measurement more stable. Therefore, the accuracy of probe measurement of wide electrode resistors can be improved, and the error between probe measurement and upper plate measurement of wide electrode resistors can be effectively reduced.

[0017] Furthermore, two trenches are provided on the resistance functional area of ​​the resistive layer, which can define the resistance functional area into a wide resistor and two outer narrow resistors, a first narrow resistor and a second narrow resistor. This design can make the electric field at the edge of the resistance functional area uniform and can disperse the resistance value, thereby achieving a uniform heat distribution effect. Moreover, since the resistance values ​​of the first narrow resistor and the second narrow resistor are relatively high, the electric field can be more concentrated in the central area of ​​the resistance functional area. Simple Explanation of the Diagram

[0018] A better understanding of the features disclosed herein can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features can be arbitrarily increased or decreased for clarity of discussion. [Figure 1] is a perspective view of a wide electrode resistor according to one embodiment of the present disclosure. [Figure 2] is a schematic diagram illustrating the solder side of a wide electrode resistor according to one embodiment of the present disclosure. [Figure 3] is a schematic cross-sectional view of a wide-electrode resistor obtained along section line AA in Figure 1. [Figure 4] is a schematic cross-sectional view of a wide-electrode resistor obtained along section line BB in Figure 1. Figures 5 through 12 are schematic diagrams illustrating various manufacturing stages of a wide-electrode resistor according to one embodiment of this disclosure. [Figure 13] is a schematic diagram of a device for measuring the resistance of a wide-electrode resistor using a probe. [Figure 14] is a schematic diagram illustrating the current flow when a conventional wide-electrode resistor is used to measure its resistance using a probe. [Figure 15] is a schematic diagram illustrating the current flow when a wide electrode resistor is used for resistance measurement using a probe according to one embodiment of the present disclosure. [Figure 16] is a schematic diagram showing the resistance measurement of the wide-electrode resistor on the upper plate. [Figure 17] is a schematic diagram showing the current flow when a conventional wide-electrode resistor is measured on the back of the plate. [Figure 18] is a schematic diagram illustrating the current flow when a wide electrode resistor is measured on the upper plate according to one embodiment of the present disclosure. [Figure 19] is a comparison diagram of the data of a wide electrode resistor according to one embodiment of the present disclosure and a conventional wide electrode resistor when measuring the resistance value using a probe. [Figure 20] is a comparison diagram of the data of a wide electrode resistor according to one embodiment of the present disclosure and the resistance value of a conventional wide electrode resistor after it is mounted on the board. [Figure 21] is a box plot comparing the resistance difference data obtained by probe and plate measurement of a wide electrode resistor according to one embodiment of the present disclosure and a conventional wide electrode resistor. Implementation

[0019] The embodiments of this disclosure are discussed in detail below. However, it will be understood that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific situations. The embodiments discussed and disclosed are for illustrative purposes only and are not intended to limit the scope of this disclosure. All embodiments of this disclosure disclose a variety of different features, but these features can be implemented individually or in combination as needed.

[0020] Furthermore, the terms "first," "second," etc., used in this article do not specifically refer to order or sequence; they are merely used to distinguish elements or operations described using the same technical terms.

[0021] The spatial relationship between the two components described in this disclosure applies not only to the orientation shown in the diagrams, but also to orientations not shown in the diagrams, such as inverted orientations. Furthermore, the terms "connection," "electrical connection," or similar expressions used in this disclosure to refer to the two components are not limited to a direct or electrical connection, but may also include indirect or electrical connections as needed.

[0022] Please refer to Figures 1 to 4, which respectively illustrate a perspective view of a wide-electrode resistor 10 according to one embodiment of this disclosure, a schematic view of the solder side of the wide-electrode resistor 10, and a cross-sectional view of the wide-electrode resistor 10 obtained along section lines AA and BB in Figure 1. The wide-electrode resistor 10 can be applied to automotive-grade or voltage sensing resistors in medical, communication, vehicle charging piles, battery management systems (BMS), and engine control units (ECU). As shown in Figure 1, the wide-electrode resistor 10 is a flip-chip type.

[0023] As shown in Figure 3, the wide-electrode resistor 10 mainly includes a carrier 100, a resistive layer 200, a first inner electrode 300, a second inner electrode 400, an insulating protective layer 500, a first outer electrode 600, and a second outer electrode 700. The carrier 100 can be used to support other components of the wide-electrode resistor 10. The carrier 100 can be a carrier film with adhesiveness on one side. For example, the surface 110 of the carrier 100 is adhesive. However, the carrier 100 can also be a non-adhesive carrier film, which is not limited to this disclosure. The carrier 100 can be, for example, polyimide (PI), FR4, glass, ceramic, or epoxy resin.

[0024] A resistive layer 200 is disposed on the surface 110 of the carrier 100. The resistive layer 200 may be, for example, a resistive sheet or a resistive material deposition layer. The shape of the resistive layer 200 may be any suitable shape according to the product design, and this disclosure is not limited thereto. In some embodiments, the resistive layer 200 is rectangular. As shown in Figures 3 and 4, the resistive layer 200 has a first surface 201 and a second surface 202 opposite to each other, a first end face 203 and a second end face 204 opposite to each other, and a first side face 205 and a second side face 206 opposite to each other. The first surface 201 and the second surface 202 may, for example, be the upper surface and the lower surface of the resistive layer 200, respectively. The first end face 203, the second end face 204, the first side face 205, and the second side face 206 may all be sides of the resistive layer 200 and located between the first surface 201 and the second surface 202. The second surface 202 is bonded to the surface 110 of the carrier 100.

[0025] Referring simultaneously to Figures 3 and 7, the resistive layer 200 includes a resistance functional region 210, a first electrode region 220, and a second electrode region 230. The first electrode region 220 and the second electrode region 230 are located on opposite sides of the resistance functional region 210. The first electrode region 220 and the second electrode region 230 are used to carry the two electrodes of the wide-electrode resistor 10. In some exemplary embodiments, the length RL of the resistance functional region 210 is 3 / 10 to 6 / 10 of the length L of the resistive layer 200. In some embodiments, the resistive layer 200 includes one or more resistance-correcting grooves 240. For example, the resistance-correcting groove 240 may be recessed from the first surface 201 of the resistive layer 200 into the resistance functional region 210.

[0026] Referring simultaneously to Figures 4 and 7, in some embodiments, the resistive layer 200 has two trenches 250 and 260. Trench 250 and 260 are respectively located at opposite edge regions of the resistance functional region 210, extending from the first surface 201 to the second surface 202 of the resistive layer 200, thus defining the resistance functional region 210 as a parallel connection of a wide resistor 212, a first narrow resistor 214, and a second narrow resistor 216. Specifically, trench 250 is located between the wide resistor 212 and the first narrow resistor 214, and the other trench 260 is located between the wide resistor 212 and the second narrow resistor 216. In some exemplary embodiments, the first narrow resistor 214 and the second narrow resistor 216 are symmetrically arranged on opposite sides of the wide resistor 212.

[0027] As shown in Figure 7, the width RW of the resistance functional area 210 is smaller than the width W of the wide electrode resistor 10. Both the first electrode area 220 and the second electrode area 230 have a width CW. The width RW of the resistance functional area 210 can be equal to or smaller than the width CW of the first electrode area 220 and the second electrode area 230. In some embodiments, the width CW of the first electrode area 220 and the second electrode area 230 is smaller than the width W of the wide electrode resistor 10, thereby preventing short circuits caused by electroplating on the short edges of the resistive layer 200. In some exemplary embodiments, the width CW of the first electrode area 220 and the second electrode area 230 is 80% to 95% of the width W of the wide electrode resistor 10.

[0028] Both the first narrow resistor 214 and the second narrow resistor 216 have a width 'a', and both trenches 250 and 260 have a width 'd'. In some embodiments, the resistance values ​​of the first narrow resistor 214 and the second narrow resistor 216 are 2 to 5 times the resistance value of the intermediate wide resistor 212, so that the main current is concentrated in the larger and lower-resistance intermediate wide resistor 212. In some exemplary embodiments, the width RW of the resistance functional region 210 is 2 / 5 to 4 / 5 of the width W of the wide electrode resistor 10, and the width 'a' of the first narrow resistor 214 and the second narrow resistor 216 is 10% to 20% of the width RW of the resistance functional region 210. Furthermore, the width 'd' of the trenches 250 and 260 can be, for example, 50 μm to 500 μm. That is, the spacing between the parallel first narrow resistor 214, wide resistor 212, and second narrow resistor 216 is 50 μm to 500 μm.

[0029] The resistive layer 200 can be a metal alloy. For example, the material of the resistive layer 200 can be a copper-manganese alloy (MnCu), a copper-nickel alloy (CuNi), a copper-manganese-nickel alloy (CuMnNi), a copper-manganese-tin alloy (CuMnSn), a nickel-chromium-aluminum alloy (NiCrAl), a nickel-chromium-aluminum-silicon alloy (NiCrAlSi), or an iron-chromium-aluminum alloy (FeCrAl). However, the material of the resistive layer 200 can be other suitable resistive materials, and this disclosure is not limited thereto.

[0030] Referring simultaneously to Figures 3 and 10, the first inner electrode 300 is disposed on the first electrode region 220 of the resistive layer 200. The first inner electrode 300 mainly includes a first body 310, a first bump 320, and a first protrusion 330. The first bump 320 and the first protrusion 330 are sequentially joined to one side of the first body 310 and protrude toward the resistance functional region 210. Specifically, the first bump 320 is joined to the side of the first body 310, and the first protrusion 330 is joined to the first bump 320 and adjacent to the resistance functional region 210. The first bump 320 protrudes from one side of the first body 310, therefore the first body 310 is wider than the first bump 320. The first protrusion 330 protrudes from the first bump 320, therefore the first bump 320 is wider than the first protrusion 330. Thus, the first inner electrode 300 has a stepped structure.

[0031] The second inner electrode 400 is disposed on the second electrode region 230 and is separated from the first inner electrode 300 by a resistance functional region 210. The second inner electrode 400 mainly includes a second body 410, a second bump 420, and a second protrusion 430. The second bump 420 and the second protrusion 430 are sequentially joined to one side of the second body 410 and protrude toward the resistance functional region 210. Specifically, the second bump 420 and the second protrusion 430 are sequentially arranged on one side of the second body 410 toward the resistance functional region 210, and the second protrusion 430 and the first protrusion 330 are opposite to each other. The second body 410 is wider than the second bump 420, and the second bump 420 is wider than the second protrusion 430. Thus, the second inner electrode 400 has a stepped structure.

[0032] In some embodiments, the first inner electrode 300 and the second inner electrode 400 are mirror-symmetrical. The material of the first inner electrode 300 and the second inner electrode 400 may be, for example, copper. In some exemplary embodiments, the first bump 330 and the second bump 430 are both arc-shaped structures to avoid excessive current concentration.

[0033] Referring simultaneously to Figures 7 and 10, in some embodiments, both the first body 310 and the second body 410 have a length CL, which is 1 / 6 to 2 / 6 of the length L of the resistor layer 200. Furthermore, both the first bump 320 and the second bump 420 have a width CW1, which is equal to or less than the width of the wide resistor 212. The first bump 320 and the second bump 420 protrude from the first body 310 and the second body 410 by a length e, respectively. In some embodiments, this length e is 25 μm to 100 μm. The first bump 330 and the second bump 430 protrude from the first bump 320 and the second bump 420 by a length S1, respectively. In some embodiments, the length S1 is 10 μm to 50 μm. Furthermore, both the first bump 330 and the second bump 430 have a width S2, which is 10 μm to 50 μm. This design allows the current and electric field to be concentrated towards the center in a stepped manner.

[0034] Referring simultaneously to Figures 2 and 3, the insulating protective layer 500 covers the resistance functional area 210 of the resistive layer 200, a portion of the first inner electrode 300, and a portion of the second inner electrode 400. In some embodiments, the insulating protective layer 500 covers the entire resistance functional area 210, the first bump 330 and the first protrusion 320 of the first inner electrode 300, and a portion of the first body 310, as well as the second bump 430 and the second protrusion 420 of the second inner electrode 400, and a portion of the second body 410. The material of the insulating protective layer 500 may be, for example, epoxy resin, resin, epoxy resin containing fillers, or polyimide (PI) and other insulating materials.

[0035] Please refer to Figure 3, which shows the insulating protective layer 500, the first inner electrode 300, and the first electrode region 220 covered by the first outer electrode 600. Specifically, the first outer electrode 600 covers the portion of the insulating protective layer 500 adjacent to the first inner electrode 300, and extends from the insulating protective layer 500 to cover the first inner electrode 300, the first end face 203 of the resistive layer 200, and the surface 110 of the carrier 100 next to the first end face 203.

[0036] The second outer electrode 700 covers another portion of the insulating protective layer 500, the second inner electrode 400, and the second electrode region 230. Specifically, the second outer electrode 700 covers the portion of the insulating protective layer 500 adjacent to the second inner electrode 400, and extends from the insulating protective layer 500 to cover the second inner electrode 400, the second end face 204 of the resistive layer 200, and the surface 110 of the carrier 100 next to the second end face 204.

[0037] In some embodiments, the first external electrode 600 includes a copper layer 610, a nickel layer 620, and a tin layer 630 stacked sequentially from the inside out, and the second external electrode 700 includes a copper layer 710, a nickel layer 720, and a tin layer 730 stacked sequentially from the inside out. In some exemplary embodiments, the distance g between the top surface 612 of the copper layer 610 and the top surface 510 of the insulating protective layer 500 is greater than 5 μm. This prevents excessive solder paste from entering between the insulating protective layer 500 and the circuit board, thus avoiding interference with the bonding between the wide electrode resistor 10 and the external circuit board.

[0038] Please refer to Figures 5 to 12, which are schematic diagrams illustrating various manufacturing stages of a wide-electrode resistor 10 according to one embodiment of this disclosure. When fabricating the wide-electrode resistor 10 as shown in Figures 1 to 4, a carrier 100 is first provided, and then a resistive layer 200 is disposed on the surface 110 of the carrier 100, as shown in Figure 5. In embodiments where the carrier 100 is a carrier film with adhesiveness on one side, the resistive layer 200 is a sheet material, such as an alloy resistive foil, and can be bonded to the surface 110 of the carrier 100. In embodiments where the carrier 100 is not adhesive, the resistive layer 200 can be formed on the surface 110 of the carrier 100 using, for example, sputtering.

[0039] Next, as shown in Figure 6, an etch mask layer M1 can be applied to the first surface 201 of the resistive layer 200 using methods such as printing, lamination, coating, or photolithography. The etch mask layer M1 is a patternable and removable etch-resistant protective layer. For example, the material of the etch mask layer M1 can be photoresist, a removable adhesive film, or a peelable ink. The areas of the first surface 201 not covered by the etch mask layer M1 are the areas to be etched, mainly the edges of the resistive layer 200 and the trench areas used to form the parallel resistor structure.

[0040] Next, using an alloy metal etching solution such as ferric chloride, copper chloride, sulfuric acid, phosphoric acid, or nitric acid, the areas of the resistive layer 200 not covered by the etching mask layer M1 are etched until the underlying carrier 100 is exposed. After etching the resistive layer 200, the etching mask layer M1 can be removed using, for example, a film-removing solvent or water washing, to expose the first surface 201 of the resistive layer 200, as shown in Figure 7. The architecture and dimensions of each part of the resistive layer 200 have been described above and will not be repeated here.

[0041] Next, as shown in Figure 8, an anti-plating mask layer M2 can be applied to a portion of the exposed surface 110 of the carrier 100 and the first surface 201 of the resistive layer 200 using methods such as printing, lamination, coating, or photolithography. The mask layer M2 is a patternable and removable anti-plating protective layer. The material of the mask layer M2 can be, for example, photoresist, a removable adhesive film, or a peelable ink. At this time, the area of ​​the first surface 201 of the resistive layer 200 not covered by the mask layer M2 is the area to be plated with the inner electrodes, namely the first electrode area 220 and the second electrode area 230.

[0042] Subsequently, as shown in FIG9, a first internal electrode 300 can be formed on the first electrode region 220 of the resistive layer 200, and a second internal electrode 400 can be formed on the second electrode region 230, for example, by electroplating. The architecture and dimensions of each part of the first internal electrode 300 and the second internal electrode 400 have been described above and will not be repeated here.

[0043] After completing the first inner electrode 300 and the second inner electrode 400, the mask layer M2 can be removed using, for example, a film-removing solvent or water washing, to expose the resistance functional area 210 of the resistive layer 200 and the surface 110 of the carrier 100 covered by the mask layer M2. After removing the mask layer M2, resistance repair operations can be selectively performed on the resistance functional area 210 of the resistive layer 200 according to product requirements to adjust the resistance value of the resistive layer 200. As shown in FIG10, the resistance repair operation removes at least a portion of the resistive layer 200, forming a resistance repair groove 240 in the resistive layer 200. For example, the resistance repair operation can be performed using laser or physical processing methods.

[0044] Next, an insulating protective layer 500 can be formed using methods such as printing, lamination, or photolithography. As shown in Figures 3 and 11, the insulating protective layer 500 covers the resistance functional area 210 of the resistive layer 200, a portion of the first electrode area 220 and a portion of the first inner electrode 300 thereon, and a portion of the second electrode area 230 and a portion of the second inner electrode 400 thereon. The insulating protective layer 500 also fills the trenches 250 and 260 of the resistive layer 200 and covers a portion of the exposed surface 110 of the carrier 100.

[0045] Subsequently, as shown in Figures 4 and 12, the first external electrode 600 and the second external electrode 700 are formed using, for example, electroplating, to complete the fabrication of the wide electrode resistor 10. The first external electrode 600 and the second external electrode 700 are opposite to each other and spaced apart. The first external electrode 600 extends from the portion of the insulating protective layer 500 adjacent to the first internal electrode 300, through the first end face 203 of the first internal electrode 300 and the resistive layer 200 to the surface 110 of the carrier 100, and covers the first internal electrode 300. The second external electrode 700 extends from the portion of the insulating protective layer 500 adjacent to the second internal electrode 400, through the second end face 204 of the second internal electrode 400 and the resistive layer 200 to the surface 110 of the carrier 100, and covers the second internal electrode 400. As described above with reference to Figure 3, the first external electrode 600 and the second external electrode 700 can be a multilayer structure. The first external electrode 600 and the second external electrode 700 can be fabricated by sequentially electroplating to form copper layers 610 and 710, nickel layers 620 and 720, and tin layers 630 and 730.

[0046] Please refer to Figures 13 to 15. Figure 13 is a schematic diagram of the apparatus for measuring the resistance of a wide-electrode resistor 10 using probes PI1, PI2, PV1, and PV2. Figures 14 and 15 are schematic diagrams showing the current C flow when measuring the resistance of a conventional wide-electrode resistor 800 and the wide-electrode resistor 10 disclosed herein using probes PI1, PI2, PV1, and PV2, respectively. Probes PI1 and PI2 are current probes used to apply current C to the wide-electrode resistors 10 and 800. Probes PV1 and PV2 are voltage probes used to measure the voltage of the wide-electrode resistors 10 and 800. As shown in Figure 14, the wide-electrode resistor 800 mainly includes a resistive layer 810 and two electrodes 820 and 830, wherein electrodes 820 and 830 are located on opposite sides of the resistive layer 810.

[0047] As shown in Figure 15, since the first inner electrode 300 and the second inner electrode 400 of the wide electrode resistor 10 are respectively provided with a first bump 330 and a second bump 430 facing the resistance functional area 210, the electric field can be provided with a shortest path through the first bump 330 and the second bump 430 for electric field radiation and reception. This design is similar to setting a set of probes at fixed positions on the internal terminal electrodes, thus stabilizing the resistance measurement. Moreover, as shown in Figures 14 and 15, during probe measurement, compared with the design of the conventional wide electrode resistor 800, the design of the wide electrode resistor 10 makes it easier for the current C to be concentrated in the middle block.

[0048] Furthermore, the resistance functional area 210 of the resistive layer 200 of the wide electrode resistor 10 includes a parallel resistor structure. The first narrow resistor 214 and the second narrow resistor 216 at both ends of the short side of the wide electrode resistor 10 are narrower than the wide resistor 212 in the middle. As a result, the current C at the first narrow resistor 214 and the second narrow resistor 216 at both ends is less, and the current C is mainly concentrated near the first bump 330 and the second bump 430 in the middle, as shown in Figure 15. As can be seen from Figures 14 and 15, compared with the design of the traditional wide electrode resistor 800, the design of the wide electrode resistor 10 allows the current C to be more concentrated, thus resulting in more stable measurements.

[0049] Please refer to Figures 16 to 18. Figure 16 is a schematic diagram illustrating the resistance measurement of the wide-electrode resistor 10 after it has been mounted on the circuit board. Figures 17 and 18 are schematic diagrams illustrating the current C flow during resistance measurement of the conventional wide-electrode resistor 800 and the wide-electrode resistor 10 disclosed herein, respectively, after they have been mounted on the circuit board. As shown in Figure 16, the first external electrode 600 and the second external electrode 700 of the wide-electrode resistor 10 are soldered to the pads 900 and 910 of the circuit board, respectively. Similarly, the wide-electrode resistor 800 can be mounted on the circuit board by soldering the electrodes 820 and 830 to the pads 900 and 910, respectively. As shown in Figures 17 and 18, after mounting, the current C can flow more evenly through the resistive layer 200 of the wide-electrode resistor 10 and the resistive layer 810 of the wide-electrode resistor 800.

[0050] The following comparative examples and embodiments are used to illustrate the technical content and effects of this embodiment in more detail. However, they are not intended to limit the present invention. Those skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention.

[0051] Taking a 1mΩ wide-electrode resistor of surface mount device (SMD) 0612 as an example, the carrier of the wide-electrode resistors in the comparative example and the embodiment is polyimide, the metal alloy material of the resistive layer is CuMnNi, and the thickness of the resistive layer is 0.1mm. Furthermore, in the wide-electrode resistor of the comparative example, the width of the electrode area of ​​the resistive layer is 3.0mm, the length of the inner electrode is 0.5mm, the length of the resistance function area is 0.6mm, and the width of the resistance function area is 2.7mm. In the wide-electrode resistor of the embodiment, the width of the electrode area of ​​the resistive layer is 3.0mm, the width of the bump of the inner electrode is 1.6mm, the length of the main body of the inner electrode is 0.43mm, the protrusion length of the bump is 0.05mm, the protrusion length of the bump point is 0.03mm, the width of the resistance function area is 2.86mm, the length of the resistance function area is 0.6mm, the width of the narrow resistor is 0.46mm, and the width of the trench is 0.15mm. Both the comparative and embodiment wide electrode resistors achieved a resistance of 1mΩ during the manufacturing process using physical drilling and grinding.

[0052] Please refer to Figures 19 to 21, which are box plots (PB1, PB2, BB1, BB2, DB1, and DB2) showing the data obtained when measuring the resistance value of the wide-electrode resistor using a probe in the embodiments and comparative examples disclosed herein, the data when measuring the resistance value after mounting on the board, and the resistance difference data obtained from measurements taken with the probe and on the board, respectively. In Figures 19 to 21, the vertical axis represents ΔR%, which is the percentage difference between the actual measured value and the standard value relative to the standard value, where the standard value is the resistance value of the wide-electrode resistor.

[0053] The wide-electrode resistors of the comparative example and the embodiment were subjected to probe screening measurements. As shown in Figure 19, box-and-whisker diagram PB2, the average value (AVG) of the wide-electrode resistor of the comparative example was -0.16%, and the standard deviation (SD) was 0.65%. As shown in Figure 19, box-and-whisker diagram PB1, the average value (AVG) of the wide-electrode resistor of the embodiment was -0.17%, and the standard deviation (SD) was 0.46%.

[0054] After probe screening and measurement, the products were soldered onto a printed circuit board, and resistance was measured. As shown in Figure 20, Box and Whiskers Diagram BB2, the average value (AVG) of the wide-electrode resistor in the comparative example was -0.45%, and the standard deviation (SD) was 0.76%. As shown in Figure 20, Box and Whiskers Diagram BB1, the average value (AVG) of the wide-electrode resistor in the embodiment was -0.27%, and the standard deviation (SD) was 0.56%.

[0055] The differences in resistance values ​​measured by the probe and the upper plate were analyzed between the embodiment and the comparative example. As shown in the box-and-whisker diagram DB2 of Figure 21, the average value (AVG) of the wide-electrode resistor in the comparative example is -0.29%, and the standard deviation (SD) is 0.45%. However, as shown in the box-and-whisker diagram DB1 of Figure 21, the average value (AVG) of the wide-electrode resistor in the embodiment is -0.10%, and the standard deviation (SD) is 0.20%.

[0056] The experimental results above show that, compared with the comparative example, the probe screening accuracy of the wide electrode resistor in the embodiment can be increased by about 0.5% (full range), the concentration of values ​​on the upper plate after screening is reduced by 0.8% (full range), the error between the probe and the upper plate values ​​can be reduced by about 0.2%, and the standard deviation (SD) is reduced by 0.2%.

[0057] As can be seen from the above embodiments, the first inner electrode and the second inner electrode of the wide-electrode resistor disclosed herein are respectively provided with a first protrusion and a second protrusion extending towards the resistance functional area, so that the electric field and current can be concentrated at the first protrusion and the second protrusion, making the probe measurement more stable. Therefore, the accuracy of probe measurement of the wide-electrode resistor can be improved, and the error between probe measurement and plate measurement of the wide-electrode resistor can be effectively reduced.

[0058] Furthermore, two trenches are provided on the resistance functional area of ​​the resistive layer, which can define the resistance functional area into a wide resistor and two outer narrow resistors, a first narrow resistor and a second narrow resistor. This design can make the electric field at the edge of the resistance functional area uniform and can disperse the resistance value, thereby achieving a uniform heat distribution effect. Moreover, since the resistance values ​​of the first narrow resistor and the second narrow resistor are relatively high, the electric field can be more concentrated in the central area of ​​the resistance functional area.

[0059] Although this disclosure has been shown above by way of embodiments, it is not intended to limit this disclosure. Anyone with ordinary knowledge in this art can make various modifications and refinements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the appended claims.

[0060] 10: Wide electrode resistor 100: Carrier 110: Surface 200: Resistive layer 201: First Surface 202: Second Surface 203: First end face 204: Second end face 205: First side view 206: Second side view 210: Resistance Function Area 212: Wide resistance 214: First narrow resistor 216: Second narrow resistor 220: First electrode region 230: Second electrode region 240: Repair groove 250: Trench 260: Trench 300: First internal electrode 310: The First Subject 320: First bump 330: First convex point 400: Second internal electrode 410: Second Subject 420: Second bump 430: Second convex point 500: Insulation protective layer 510: Top surface 600: First external electrode 610: Copper layer 612: Top surface 620: Nickel layer 630: Tin layer 700: Second external electrode 710: Copper layer 712: Top surface 720: Nickel layer 730: Tin layer 800: Wide electrode resistor 810: Resistive layer 820: Electrode 830: Electrode 900: solder pad 910: Solder pad AA: Section line a: width BB1: Box and Whiskers Diagram BB2: Box and Whiskers Diagram BB: Section line C: Current CL: Length CW: Width CW1: Width d: width DB1: Box and Whiskers Diagram DB2: Box and Whiskers Diagram e: length g: distance L: Length M1: Etched overlay M2: Covering Layer PB1: Box and Whisker Diagram PB2: Box-whisker diagram PI1: Probe PI2: probe PV1: Probe PV2: Probe RL: Length RW: Width S1: Length S2: Width W: Width

Claims

1. A wide-electrode resistor, comprising: a carrier; a resistive layer disposed on the carrier, wherein the resistive layer includes a resistance functional region, and a first electrode region and a second electrode region located on opposite sides of the resistance functional region, wherein the resistive layer has two trenches that pass through opposite edge regions of the resistance functional region to define the resistance functional region as a wide resistor, a first narrow resistor, and a second narrow resistor connected in parallel, the first narrow resistor and the second narrow resistor being symmetrically arranged on opposite sides of the wide resistor; a first inner electrode disposed on the first electrode region, wherein the first inner electrode includes a first body, and a first bump and a first protrusion sequentially joined to one side of the first body, the first bump and the first protrusion protruding toward the resistance functional region, wherein the first body is wider than the first bump, and the first bump is wider than the first protrusion; A second inner electrode is disposed on the second electrode region, wherein the second inner electrode includes a second body, and a second protrusion and a second protrusion sequentially joined to one side of the second body, the second protrusion and the second protrusion protruding toward the resistance functional region, the second protrusion and the first protrusion being opposite to each other, wherein the second body is wider than the second protrusion, and the second protrusion is wider than the second protrusion; an insulating protective layer covers the resistance functional region, a portion of the first inner electrode, and a portion of the second inner electrode; a first outer electrode covers a portion of the insulating protective layer, the first inner electrode, and the first electrode region; and a second outer electrode covers another portion of the insulating protective layer, the second inner electrode, and the second electrode region, and is opposite to and spaced apart from the first outer electrode.

2. The wide electrode resistor as claimed in claim 1, wherein the width of one of the first narrow resistors and the width of one of the second narrow resistors are 10% to 20% of the width of one of the resistance functional regions, and the width of each of the two trenches is 50 μm to 500 μm.

3. The wide electrode resistor as claimed in claim 1, wherein the resistance of each of the first narrow resistor and the second narrow resistor is 2 to 5 times the resistance of one of the wide resistors.

4. The wide electrode resistor as claimed in claim 1, wherein the width of one of the first bumps and the width of one of the second bumps are equal to or less than the width of one of the wide resistors.

5. The wide electrode resistor as claimed in claim 1, wherein the length of the first bump protruding from one side of the first body and the length of the second bump protruding from one side of the second body are 25 μm to 100 μm, the length of the first protrusion protruding from one side of the first bump and the length of the second protrusion protruding from one side of the second bump are 10 μm to 50 μm, and the width of the first protrusion and the width of the second protrusion are 10 μm to 50 μm.

6. The wide electrode resistor as claimed in claim 1, wherein the width of one of the resistance functional regions is 2 / 5 to 4 / 5 of the width of one of the wide electrode resistors, and the width of one of the first electrode regions and the width of one of the second electrode regions are 80% to 95% of the width of the wide electrode resistor.

7. The wide electrode resistor as claimed in claim 1, wherein the length of one of the resistance functional regions is 3 / 10 to 6 / 10 of the length of one of the resistive layers, and the lengths of one of the first bodies and one of the second bodies are 1 / 6 to 2 / 6 of the length of one of the resistive layers.

8. The wide electrode resistor as claimed in claim 1, wherein each of the first bump and the second bump is an arcuate structure.

9. The wide electrode resistor as claimed in claim 1, wherein the first inner electrode is mirror-symmetrical to the second inner electrode.

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