Device topologies for electro-photonic integrated circuits comprising transmitters and receivers

Abstract

This invention discloses a device topology for a monolithic electro-optic integrated circuit comprising optical transmitters and receivers, wherein each transmitter includes a first electroabsorption modulator (EAM) waveguide and EAM driving electronics, and each receiver includes a waveguide photodiode (which may be a second EAM waveguide) and a transimpedance amplifier (TIA); and optical input ports for coupling external lasers to each transmitter, or on-chip lasers. Compared to discrete electronics, monolithic integration of photonic devices and electronics on a single chip with a compact form factor provides reduced interconnection paths between the EAM and electronics. Tx optical output ports and Rx optical input ports may be staggered or arranged along the first edge (front edge) of the chip with a port pitch of ≤350µm. The epitaxial layer structure may be fabricated from InP-based materials, providing an electronic layer comprising InP HBTs and an overlay photonic layer providing the first and second EAM waveguides.

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