Semiconductor memory device and method for forming the same

Abstract

A semiconductor structure is provided. The semiconductor memory device includes memory transistors disposed in respective levels stacked in a first direction, and first conductive lines extending in a second direction. The second direction is perpendicular to the first direction. The first conductive lines are disposed in the respective levels, and are electrically coupled to the first terminals of the memory transistors. The semiconductor memory device further includes second conductive lines extending in the first direction and electrically coupled to the second terminals of the memory transistors, and third conductive lines extending in the first direction and electrically coupled to the third terminals of the memory transistors.

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