Semiconductor structure

Abstract

Semiconductor structure is provided. The semiconductor structure includes a substrate, an insulating stacked structure on the substrate, a stacked structure on the substrate and including conductive layers and first insulating layers stacked alternately, a pillar element penetrating the stacked structure and including a memory layer and a channel layer, a first resistor element and a dielectric film covering an upper surface of the first resistor element. The memory layer surrounds the channel layer. A portion of the first resistor element is in the insulating stacked structure. Another portion of the first resistor element is above the insulating stacked structure. The semiconductor structure has a device region and a peripheral region. The insulating stacked structure and the first resistor element are in the peripheral region. The stacked structure is in the device region.

Claims

1. A semiconductor structure comprising: a substrate; an insulating stacked structure on the substrate; a stacked structure on the substrate and comprising a plurality of conductive layers and a plurality of first insulating layers stacked in an alternating manner; and a pillar element extending through the stacked structure and comprising a memory layer and a channel layer, the memory layer surrounding the channel layer; A first resistive element, a portion of which is in the insulating stack structure and another portion of which is above the insulating stack structure; A second resistive element, a portion of which is in the insulating stack structure and another portion of which is above the insulating stack structure, wherein the first resistive element and the second resistive element comprise different materials and the resistance value of the first resistive element is greater than the resistance value of the second resistive element; And a dielectric film covering the upper surface of the first resistive element, wherein the semiconductor structure has a device region and a peripheral region, the insulating stack structure and the first resistive element are in the peripheral region, and the stack structure is in the device region.

2. The semiconductor structure as claimed in claim 1 further includes an element layer and a contact element, the element layer being disposed between the substrate and the insulating stack structure, the element layer including one or more transistors, the contact element penetrating the insulating stack structure, and the first resistive element being electrically connected to the one or more transistors through the contact element.

3. The semiconductor structure as described in claim 2 further includes an upper interconnect structure and a lower interconnect structure, the upper interconnect structure being above the insulating stack structure, the lower interconnect structure being between the element layer and the insulating stack structure, and the first resistive element being electrically connected to the one or more transistors through the upper interconnect structure, the contact element and the lower interconnect structure.

4. The semiconductor structure as claimed in claim 2 further includes a second resistive element, a portion of which is in the insulating stack structure and another portion of which is above the insulating stack structure disposed on the substrate in a longitudinal direction, the first resistive element being on one side of the contact element.

5. The semiconductor structure as claimed in claim 1, wherein the first resistive element comprises tungsten and the second resistive element comprises polysilicon.

6. The semiconductor structure as claimed in claim 1, wherein the insulating stack structure comprises a plurality of second insulating layers and a plurality of insulating films stacked alternately along a longitudinal direction, the plurality of second insulating layers and the plurality of insulating films comprising different materials, the plurality of insulating films comprising nitrides, and the first resistive element overlapping N of the insulating films in a transverse direction, 1 N 3.

7. The semiconductor structure as claimed in claim 1, wherein the insulating stack structure comprises a plurality of second insulating layers and a plurality of insulating films stacked alternately along a longitudinal direction, the insulating films comprising nitrides, the first resistive element overlapping N insulating films in the plurality of insulating films in a transverse direction, 1 N 2, and the second resistive element overlapping M insulating films in the plurality of insulating films in the transverse direction, 2 M 3.

8. The semiconductor structure as claimed in claim 1 further includes a plurality of contact elements, the plurality of contact elements being spaced apart from each other and extending through the insulating stack structure, wherein the width of the first resistive element is less than or equal to the width of one of the plurality of contact elements.

9. The semiconductor structure as described in claim 8, wherein the first resistive element and the second resistive element are disposed between the plurality of contact elements.

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