Semiconductor memory devices and their manufacturing methods

Abstract

An embodiment provides a semiconductor memory device and a method for manufacturing the same, which ensures higher reliability. The semiconductor memory device based on this embodiment includes: a stacked body, a semiconductor layer, a first insulating layer, a charge storage layer, a second insulating layer, and a third insulating layer. The stacked body is formed by alternately stacking conductive and insulating layers in a first direction. The semiconductor layer is disposed within the stacked body along the first direction. The first insulating layer is disposed between the stacked body and the semiconductor layer along the first direction. The charge storage layer is disposed between the stacked body and the first insulating layer along the first direction. The second insulating layer is disposed between the stacked body and the charge storage layer along the first direction. The third insulating layer has a first portion disposed between the conductive layer and the second insulating layer. The third insulating layer has two or more layers. The carbon concentration in the conductive layer side of the third insulating layer is higher than the carbon concentration in the other layers of the third insulating layer.

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