Semiconductor devices and manufacturing methods thereof

Abstract

This invention provides a semiconductor device capable of suppressing leakage current and a method for manufacturing the same. The semiconductor device based on this embodiment includes a first structure and a second structure. The first structure is formed by a plurality of first semiconductor elements. The second structure is laminated onto the first structure. The second structure includes a substrate, a plurality of second semiconductor elements disposed on a first surface of the substrate, and an element separation portion disposed between the plurality of second semiconductor elements and penetrating the substrate between the first surface and a second surface of the substrate opposite to the first surface. A first conductor is disposed between the first structure and the second structure and is electrically separated from the substrate. The element separation portion includes: a first separation portion extending from the first surface towards the second surface, the width of which decreases as it extends from the first surface towards the second surface in a direction perpendicular to a first direction; and a second separation portion extending from the second surface towards the first surface, the width of which decreases as it extends from the second surface towards the first surface.

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