Semiconductor devices and manufacturing methods thereof

Abstract

This invention provides a semiconductor device capable of suppressing leakage current and a method for manufacturing the same. The semiconductor device based on this embodiment includes a first structure, a second structure, a first conductor, and a second conductor. The first structure is formed from a plurality of first semiconductor elements. The second structure includes a substrate having a plurality of impurity diffusion layers and a plurality of second semiconductor elements with a plurality of impurity diffusion layers disposed on a first side of the substrate, and is deposited on a second side of the substrate located on the side opposite to the first side. The first conductor is disposed between the first structure and the second structure, electrically separated from the substrate, and electrically connected to at least one of the plurality of first semiconductor elements. The second conductor is disposed between the first conductor and the plurality of impurity diffusion layers, shielding at least a portion of the plurality of impurity diffusion layers from the influence of the electric field of the first conductor.

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