Semiconductor device and a method of forming thin film resistors

TW202638750APending Publication Date: 2026-09-16SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114150017
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-06-17
Filing Date
2025-12-18
Publication Date
2026-09-16

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Abstract

A method of forming a TFR and a semiconductor device are provided. The method includes depositing a first interlayer dielectric (ILD) film on a substrate to define a vertical dimension of the TFR; forming a first photoresist pattern using a photomask to define a horizontal dimension of the TFR; etching the first ILD film using the first photoresist pattern to form a trench in the first ILD film; and depositing a resistive thin film material on the first ILD film and within the trench.
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