Thin film transistor substrate

Abstract

The present disclosure provides a thin-film transistor substrate including a substrate, a first gate disposed on the substrate and including a fist side and a second side, a semiconductor layer disposed on the first gate, a second gate disposed on the semiconductor layer and including a third side and a fourth side, a source disposed on the semiconductor layer and adjacent to the first side and the third side, and a drain disposed on the semiconductor layer and adjacent to the second side and the fourth side. The second gate overlaps with the first gate. The first side is distance from the second side by a first distance, the second side is distance from the fourth side by a second distance, and an absolute value of a difference between the first distance and the second distance is greater than or equal to

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