Semiconductor device including two-dimensional nano-crystalline grain channel, method of manufacturing semiconductor device, and electronic apparatus including semiconductor device

Abstract

Provided are a semiconductor device including a two-dimensional nano-crystalline grain channel, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device. The semiconductor device includes a channel layer, a gate electrode disposed to face the channel layer, a gate insulating film disposed between the channel layer and the gate electrode, and a source electrode and a drain electrode electrically connected to the channel layer. The channel layer includes a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer disposed on the first transition metal dichalcogenide layer. The first transition metal dichalcogenide layer includes a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure. The second transition metal dichalcogenide layer includes a nano-crystalline grain transition metal dichalcogenide material having a two-dimensional crystal structure.

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