Method for forming capacitor, semiconductor device, module, and electronic device

TW202638766APending Publication Date: 2026-09-16SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
TW115112419
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2015-10-30
Filing Date
2016-10-18
Publication Date
2026-09-16

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Abstract

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.
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