Semiconductor device and method for making the same

TW202638769APending Publication Date: 2026-09-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114116456
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-05
Filing Date
2025-05-01
Publication Date
2026-09-16

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Abstract

A semiconductor device with a low leakage antenna diode is provided. The semiconductor device includes a semiconductor substrate and a n-well and a p-well formed in or on the substrate. A first circuit element is formed in or on the n-well. An antenna diode formed in or on the p-well. A punch through mitigation structure is formed between the first circuit element and the antenna diode. The punch through mitigation structure is configured to mitigate a punch through current between the first circuit element and the antenna diode.
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