Semiconductor structure and method of forming the same

Abstract

A method for forming a gate structure according to the present disclosure includes receiving a precursor structure that includes a substrate, first nanostructures over a first region of the substrate, and second of nanostructures over a second region of the substrate, depositing a gate dielectric layer over the first nanostructures and the second nanostructures, depositing a first work function metal layer over the first nanostructures and the second nanostructures, depositing a diffusion blocking layer over the first work function metal layer, selectively removing the diffusion blocking layer and the first work function metal layer from the first nanostructures over the first region, depositing a second work function metal layer over the first nanostructures and the second nanostructures, and depositing a metal fill layer over the second work function metal layer.

Images