Semiconductor device with high-k metal gate layer and method for preparing the same

Abstract

A semiconductor device includes a fin structure disposed over a semiconductor substrate. The semiconductor device also includes a source / drain region disposed in the fin structure. The semiconductor device further includes a gate structure disposed over and extending into the fin structure. The gate structure is disposed adjacent to the source / drain region. The gate structure includes a high-k metal gate layer and a lower gate electrode layer disposed over the high-k metal gate layer.

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