Semiconductor devices and methods for manufacturing semiconductor devices

Abstract

A plurality of full-circumference gate transistors are provided on a substrate. Each of the aforementioned full-circumference gate transistor systems comprises: a nanosheet laminate formed by laminating a plurality of nanosheet layers made of semiconductor material; insulating internal spacers sandwiched between the aforementioned nanosheet layers and located at both ends of the aforementioned nanosheet layers; gate electrodes disposed on the upper part of the aforementioned nanosheet laminate, with gate insulating films covering the entire circumference of the aforementioned nanosheet layers between the aforementioned internal spacers; and the aforementioned... The nanosheet layer has two ends with source / drain electrodes erected along the nanosheet laminate; a contact connected to the source / drain electrodes; an insulating spacer sandwiched between the source / drain electrodes, the contact, and the gate electrode; and a substrate spacer disposed between the spacer and the nanosheet laminate, while surrounding the laminated portion of the nanosheet layer and the internal spacer; the substrate spacer is a semiconductor device made of an insulating material different from the spacer.

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