Fully self-aligned contact between backside power and interconnect using replacement metal contact integration

Abstract

Aspects of the present disclosure provide a method of fabricating a semiconductor structure that includes a source-and-drain (S / D) contact and a metal backside contact via vertically aligned with the S / D contact. For example, the method can include providing a substrate, with an oxide layer formed on the substrate, forming over the oxide layer a fin structure that includes a stack of alternating semiconductor layers and dielectric layers, etching a portion of the oxide layer beneath the fin structure to form a backside contact via opening, forming at least one S / D contact to cover the semiconductor layers of the fin structure, and metalizing the backside contact via opening to form a metal backside contact via.

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