Semiconductor structure and the methods of forming the same

Abstract

A method includes forming a dummy gate stack, forming gate spacers on opposing sides of the dummy gate stack, forming a contact etch stop layer, with the gate spacers being in the contact etch stop layer, forming an inter-layer dielectric over the contact etch stop layer, recessing the dummy gate stack and the gate spacers to form a recess in the inter-layer dielectric, and depositing a protection layer. The protection layer comprises a portion in the recess. The method further includes etching the protection layer to leave a protection layer in the recess, removing the dummy gate stack to extend the recess downwardly, and forming a replacement gate stack in the recess.

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