Semiconductor device manufacturing method and semiconductor device

Abstract

The present invention provides a method for manufacturing a semiconductor device, comprising the following steps: forming a nanosheet stack on a semiconductor substrate by stacking a plurality of nanosheets made of semiconductor material via a sacrificial layer, and patterning the nanosheet stack into a linear shape; forming a linear virtual gate layer extending substantially perpendicularly to the linear nanosheet stack, and an insulating sidewall covering the sidewall of the virtual gate layer; patterning the nanosheet stack into an island shape by etching with the virtual gate layer and the insulating sidewall as a mask; forming a source / drain electrode on the exposed surface of the island-shaped nanosheet stack by epitaxial growth; replacing the linear virtual gate layer and the sacrificial layer with gate electrodes; separating the linear gate electrodes; and separating the source / drain electrodes formed adjacent to each other in the extension direction of the gate electrodes in the same step as separating the linear gate electrodes.

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