Semiconductor devices and methods for manufacturing semiconductor devices

TW202638785APending Publication Date: 2026-09-16RAPIDUS CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114147240
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-07-07
Filing Date
2025-12-03
Publication Date
2026-09-16

Smart Images

  • Figure TWG2TA001076607_001
    Figure TWG2TA001076607_001
  • Figure TWG2TA001076607_002
    Figure TWG2TA001076607_002
  • Figure TWG2TA001076607_003
    Figure TWG2TA001076607_003
Patent Text Reader

Abstract

A semiconductor device includes: a field-effect transistor formed on a first main surface of a semiconductor substrate; a power supply network formed on a second main surface of the semiconductor substrate; a contact portion connecting a first source / drain of the field-effect transistor to the power supply network; an insulating sheet disposed between the semiconductor substrate and the second source / drain of the field-effect transistor; and a leakage prevention insulating film extending from the second main surface of the semiconductor substrate toward the first main surface at a position opposite to the insulating sheet.
Need to check novelty before this filing date? Find Prior Art