Semiconductor devices and methods for manufacturing semiconductor devices
TW202638785APending Publication Date: 2026-09-16RAPIDUS CORP
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Patent Information
- Application Number
- TW114147240
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-07-07
- Filing Date
- 2025-12-03
- Publication Date
- 2026-09-16
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Abstract
A semiconductor device includes: a field-effect transistor formed on a first main surface of a semiconductor substrate; a power supply network formed on a second main surface of the semiconductor substrate; a contact portion connecting a first source / drain of the field-effect transistor to the power supply network; an insulating sheet disposed between the semiconductor substrate and the second source / drain of the field-effect transistor; and a leakage prevention insulating film extending from the second main surface of the semiconductor substrate toward the first main surface at a position opposite to the insulating sheet.
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