Semiconductor device and fabricating method thereof

Abstract

An integrated circuit includes a complimentary field effect transistor (CFET). The CFET includes a first transistor including a pair of first source / drain regions and a plurality of stacked first channels extending in the first lateral direction between the pair of first source / drain regions. The CFET includes a second transistor above the first transistor and including a pair of second source / drain regions and a plurality of stacked second channels extending in the first lateral direction between the pair of second source / drain regions. The CFET includes gate spacer layers defining a gate trench adjacent to the second channels and a gate metal in the gate trench and between the second channels. The gate metal has a first length in the first lateral direction in the gate trench and a second length in the first lateral direction between the second channels. The first length is greater than the second length.

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