Semiconductor devices and method of fabricating thereof

Abstract

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second nanostructured channel regions, and a gate structure. The gate structure includes first and second metal layers surrounding the first and second nanostructured channel regions and a gate metal layer disposed on the first and second metal layers. The first and second metal layers are different from each other. The semiconductor device further includes an isolation structure disposed between and in contact with the first and second nanostructured channel regions and a first contact structure disposed on surfaces of the isolation structure and the first and second metal layers that face the substrate.

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