Optoelectronic component

Abstract

The invention relates to an optoelectronic component, which comprises: a substrate; three arrangement layers extending along a direction perpendicular to a stacking direction of a plane of the substrate; the three arrangement layers comprise: a first semiconductor layer deposited on the substrate; the second semiconductor layer, called an active layer, deposited on the first semiconductor layer; a N-doped third semiconductor layer, called N-doped layer, deposited on the active layer; the first semiconductor layer being a layer composed of at least two regions: an intrinsic region; a P-doped region; wherein the N-doped layer and the active layer are disposed to at least cover the intrinsic region, wherein at least one electric contact is disposed on the P-doped region, and wherein at least one electric contact is disposed on the N-doped layer.

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