Flip chip photodiode and manufacturing method thereof

Abstract

A flip-chip photodiode and a manufacturing method thereof are provided. The flip-chip photodiode includes a mesa epitaxial layer, a second conductive type epitaxial layer, a transparent substrate and an optical bonding layer. The mesa epitaxial layer has a laser sintered side wall, which is arranged on the outer periphery of the mesa epitaxial layer. The second conductive type epitaxial layer is disposed on the mesa epitaxial layer, and the optical bonding layer bonds the transparent substrate to the second conductive type epitaxial layer. When an external light enters the optical bonding layer through the transparent substrate, only a light with a specific waveband of the external light is allowed to pass therethrough and other light of the external light other than the specific waveband are blocked.

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