Photodiode and manufacturing method thereof

Abstract

A photodiode and a manufacturing method thereof are provided. The photodiode comprises a substrate, a first conductive type epitaxial layer, an intrinsic epitaxial layer, a second conductive type in-situ doped epitaxial layer and a first laser sintering sidewall. The first conductive type epitaxial layer is disposed on the substrate, the intrinsic epitaxial layer is disposed on the first conductive type epitaxial layer, and the second conductive type in-situ doped epitaxial layer is disposed on the intrinsic epitaxial layer. The first laser sintering sidewall is disposed on an outer periphery of the second conductive type in-situ doped epitaxial layer to define an active region and substantially block external light from entering the second conductive type in-situ doped epitaxial layer through a device sidewall. The device sidewall of the photodiode is jointly defined by each sidewall of the substrate, the first conductive type epitaxial layer, the intrinsic epitaxial layer and the second conductive type in-situ doped epitaxial layer, and the first laser sintering sidewall is disposed inside the device sidewall.

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