Horizontal photodiode and manufacturing method thereof

Abstract

A horizontal photodiode and a manufacturing method thereof are provided. The horizontal photodiode includes a mesa epitaxial layer, a second conductive type epitaxial layer, a transparent substrate and an optical bonding layer. The mesa epitaxial layer has a laser sintered side wall, which is arranged on the outer periphery of the mesa epitaxial layer. The second conductive type epitaxial layer is disposed under the mesa epitaxial layer. The optical bonding layer is interposed between the transparent substrate and the second conductive type epitaxial layer for blocking an external light from entering the second conductive type epitaxial layer through the transparent substrate.

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