Pixel of image sensor, method for preparing the same, and image sensor system

Abstract

Provided are systems, methods, and apparatuses for short-wave infrared pixels based on non-scattering nanostructures. In one or more examples, the systems, devices, and methods include forming a back reflector on a substrate, the back reflector being configured to reflect electromagnetic radiation; forming a first doped region of a first semiconductor adjacent to the back reflector; forming an absorption region of a second semiconductor adjacent to at least a portion of the first doped region, the absorption region being configured as a photodetector; forming a second doped region of the first semiconductor adjacent to the absorption region; and forming a nanostructure adjacent to the second doped region, the nanostructure configured to allow light incident on the pixel to pass through the nanostructure and to steer a portion of the light reflected off the back reflector towards the absorption region.

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