Integrated chip and method for forming integrated chip
TW202638817APending Publication Date: 2026-09-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114116726
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-12
- Filing Date
- 2025-05-05
- Publication Date
- 2026-09-16
Smart Images

Figure TWG2TA001076097_001 
Figure TWG2TA001076097_002 
Figure TWG2TA001076097_003
Abstract
An integrated chip including a photodetector and a transfer transistor, a source follower transistor, a first overflow transistor, a first LOFIC (lateral overflow integration capacitor), a second overflow transistor, and a second LOFIC. The transfer transistor includes a first source / drain coupled to the photodetector. The source follower transistor includes a first source / drain coupled to a supply voltage terminal, a second source / drain coupled to an output terminal, and a gate coupled to a second source / drain of the transfer transistor. The first overflow transistor includes a first source / drain coupled to the gate of the source follower transistor. The first LOFIC includes a first electrode coupled to a second source / drain of the first overflow transistor. The second overflow transistor includes a first source / drain coupled to the gate of the source follower transistor. The second LOFIC includes a first electrode coupled to a second source / drain of the second overflow transistor.
Need to check novelty before this filing date? Find Prior Art
