Integrated chip and method for forming integrated chip

TW202638817APending Publication Date: 2026-09-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114116726
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-12
Filing Date
2025-05-05
Publication Date
2026-09-16

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Abstract

An integrated chip including a photodetector and a transfer transistor, a source follower transistor, a first overflow transistor, a first LOFIC (lateral overflow integration capacitor), a second overflow transistor, and a second LOFIC. The transfer transistor includes a first source / drain coupled to the photodetector. The source follower transistor includes a first source / drain coupled to a supply voltage terminal, a second source / drain coupled to an output terminal, and a gate coupled to a second source / drain of the transfer transistor. The first overflow transistor includes a first source / drain coupled to the gate of the source follower transistor. The first LOFIC includes a first electrode coupled to a second source / drain of the first overflow transistor. The second overflow transistor includes a first source / drain coupled to the gate of the source follower transistor. The second LOFIC includes a first electrode coupled to a second source / drain of the second overflow transistor.
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