Semiconductor material and method for producing the same, target for forming semiconductor thin film, molded article, photoelectric conversion device, optical filter, and sensor array

Abstract

This invention provides a semiconductor material that exhibits light absorption in the short-wavelength infrared region and can be used as a SWIR sensor, as well as a method for manufacturing the same, a shaped body, a target for forming a semiconductor thin film, a photoelectric conversion element, a filter, and a sensor array. The semiconductor material disclosed herein comprises a semiconductor thin film containing a semiconductor (A) represented by the formula Bi₂OS₂, and having an energy bandgap of 0.6 eV to 0.95 eV.

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