Light-emitting diode package structure and manufacturing method thereof

Abstract

A light-emitting diode package structure includes a conductive substrate, a first insulating layer, a plurality of light-emitting diode elements, a first conductive layer, a second insulating layer and a second conductive layer. The first insulating layer is disposed on the conductive substrate and has a plurality of first through holes. A light-emitting surface of each of the light-emitting diode elements is connected to the conductive substrate, and a connecting surface of each of the light-emitting diode elements is exposed in corresponding one of the first through holes. The first conductive layer is connected to the first insulating layer and the connecting surface of each of the light-emitting diode elements. The second insulating layer is connected to the first conductive layer and has a plurality of second through holes. The second conductive layer is disposed in the second through holes and connected to the first conductive layer. The conductive substrate is a transparent conductive substrate. Therefore, the transparency of the light-emitting diode package structure not in display can be improved.

Description

[Technical Field]

[0001] This disclosure relates to a light-emitting diode (LED) packaging structure, and more particularly to an LED packaging structure and manufacturing method thereof that can improve manufacturing convenience and transparency. [Previous Technology]

[0002] In conventional LED packaging processes, multiple LED elements are typically fixed onto a substrate, then connected by wires to form a circuit for current and signal transmission, and finally encapsulated with a colloid. However, conventional LED packaging processes involve multiple steps, which not only reduces production efficiency and ease of structural adjustment, but also makes it difficult for the packaged product to maintain high transparency when not emitting light due to the configuration of the LED elements with other structures. [Summary of the Invention]

[0003] The purpose of this disclosure is to provide a light-emitting diode packaging structure and its manufacturing method, which simplifies the process and improves the transparency of the packaging structure by configuring a substrate, an insulating layer and a conductive layer with a specific structure.

[0004] One embodiment of this disclosure provides a light-emitting diode (LED) packaging structure, comprising a conductive substrate, a first insulating layer, a plurality of LED elements, a first conductive layer, a second insulating layer, and a second conductive layer. The first insulating layer is disposed on a surface of the conductive substrate and has a plurality of first through-holes. LED elements are embedded in the first insulating layer, with one emitting surface of each LED element connected to the conductive substrate, and one connecting surface of each LED element exposed in a corresponding first through-hole. The first conductive layer connects the first insulating layer to the connecting surfaces of each LED element, such that the first insulating layer is located between the first conductive layer and the conductive substrate. The second insulating layer connects to the first conductive layer, such that the first conductive layer is located between the first insulating layer and the second insulating layer, and the second insulating layer has a plurality of second through-holes, with a portion of the first conductive layer exposed in the second through-holes. The second conductive layer is disposed in the second through-holes and connected to the first conductive layer. The conductive substrate is a transparent conductive substrate.

[0005] According to the aforementioned light-emitting diode packaging structure, the first insulating layer has a first thickness, and the first thickness can be from 1 μm to 50 μm.

[0006] According to the aforementioned light-emitting diode packaging structure, the second insulating layer has a second thickness, and the second thickness can be from 1 μm to 50 μm.

[0007] According to the aforementioned light-emitting diode packaging structure, each first through hole has a first central axis, each second through hole has a second central axis, each light-emitting diode element has a width, and the distance between the first central axis and the corresponding second central axis may not be greater than three times the width.

[0008] Based on the aforementioned light-emitting diode packaging structure, it may further include a protective layer that can be connected to the second conductive layer, such that the second conductive layer is located between the second insulating layer and the protective layer.

[0009] Another embodiment of this disclosure provides a method for manufacturing a light-emitting diode (LED) package structure, comprising the following steps: A plurality of LED elements are disposed on a surface of a conductive substrate, with one light-emitting surface of each LED element facing the conductive substrate. A first insulating layer is formed on the surface of the conductive substrate, and the LED elements are embedded in the first insulating layer. A plurality of first vias are formed in the first insulating layer, and a connection surface of each LED element is exposed in a corresponding first via. A first conductive layer is formed, connecting the first insulating layer to the connection surface of each LED element, and the first insulating layer is located between the first conductive layer and the conductive substrate. A second insulating layer is formed, connecting the second insulating layer to the first conductive layer, and the first conductive layer is located between the first insulating layer and the second insulating layer. A plurality of second vias are formed in the second insulating layer, exposing portions of the first conductive layer in the second vias. A second conductive layer is disposed in the second vias and connected to the first conductive layer to obtain an LED package structure. The conductive substrate is a transparent conductive substrate.

[0010] According to the aforementioned manufacturing method of the light-emitting diode packaging structure, the first insulating layer has a first thickness, and the first thickness can be from 1 μm to 50 μm.

[0011] According to the aforementioned manufacturing method of the light-emitting diode packaging structure, the second insulating layer has a second thickness, and the second thickness can be from 1 μm to 50 μm.

[0012] According to the aforementioned manufacturing method of the light-emitting diode packaging structure, each first through hole has a first central axis, each second through hole has a second central axis, each light-emitting diode element has a width, and the distance between the first central axis and the corresponding second central axis may not be greater than three times the width.

[0013] The manufacturing method of the aforementioned light-emitting diode packaging structure may further include forming a protective layer, which may be connected to the second conductive layer and the second conductive layer is located between the second insulating layer and the protective layer.

[0014] Accordingly, the light-emitting diode packaging structure and manufacturing method disclosed herein, by selecting a transparent conductive substrate and configuring a first through hole and a second through hole, thereby adjusting the position of the light-emitting diode element, the first conductive layer and the second conductive layer and the light emission direction of the light-emitting diode element, is conducive to simplifying the process and improving the convenience of adjusting the structural configuration, so that the light-emitting diode packaging structure has a good light emission effect, and the light-emitting diode packaging structure disclosed herein can still maintain good transparency when not displayed.

Implementation Method

[0015] The various embodiments of this disclosure will be discussed in more detail below. However, this embodiment can be an application of various disclosed concepts and can be implemented in various different specific scopes. The specific embodiments are for illustrative purposes only and are not limited to the scope of the disclosure.

[0016] In addition, for the sake of simplifying the diagrams, some commonly used structures and components will be drawn in a simple schematic manner, and repeated components may be represented by the same or similar numbers.

[0017] Please refer to Figure 1 and Figure 2. Figure 1 is a cross-sectional view of the light-emitting diode packaging structure 100 according to one embodiment of the present disclosure, and Figure 2 is a bottom view of the light-emitting diode packaging structure 100 in Figure 1. The light-emitting diode packaging structure 100 includes a conductive substrate 110, a first insulating layer 120, a plurality of light-emitting diode elements 130, a first conductive layer 140, a second insulating layer 150, and a second conductive layer 160.

[0018] In detail, the conductive substrate 110 is a transparent conductive substrate. A first insulating layer 120 is disposed on one surface of the conductive substrate 110, and the first insulating layer 120 has a plurality of first through holes 121. Light-emitting diode elements 130 are embedded in the first insulating layer 120, and one light-emitting surface of each light-emitting diode element 130 is connected to the conductive substrate 110, and one connecting surface of each light-emitting diode element 130 is exposed in the corresponding first through hole 121. In this way, the light-emitting diode element 130 can be electrically connected to other components through the exposed connecting surface, which is beneficial to improving the convenience of subsequent assembly. Moreover, the light-emitting surface of the light-emitting diode element 130 faces the conductive substrate 110 to avoid affecting the light emission effect of the light-emitting diode element 130.

[0019] The first conductive layer 140 connects the first insulating layer 120 to the connection surfaces of each light-emitting diode element 130, such that the first insulating layer 120 is located between the first conductive layer 140 and the conductive substrate 110. The second insulating layer 150 connects the first conductive layer 140, such that the first conductive layer 140 is located between the first insulating layer 120 and the second insulating layer 150. In this way, the first conductive layer 140 can form an electrical connection with the light-emitting diode element 130, and the first insulating layer 120 and the second insulating layer 150 can jointly reduce the interference of the first conductive layer 140 from external circuits.

[0020] The second insulating layer 150 has a plurality of second through holes 151, and a portion of the first conductive layer 140 is exposed in the second through holes 151. The second conductive layer 160 is disposed in the second through holes 151 and connected to the first conductive layer 140. Thus, the first conductive layer 140 and the second conductive layer 160 can form an electrical connection through the second through holes 151, which improves manufacturing convenience.

[0021] The first insulating layer 120 has a first thickness, which can be from 1 μm to 50 μm. The second insulating layer 150 has a second thickness, which can be from 1 μm to 50 μm. This allows for effective insulation while reducing the size of the light-emitting diode package structure 100.

[0022] Each first through hole 121 has a first central axis A1, each second through hole 151 has a second central axis A2, and each light-emitting diode element 130 has a width W. The distance D between the first central axis A1 and the corresponding second central axis A2 may not exceed three times the width W. This allows the distance D between the first through hole 121 and the second through hole 151 to be adjusted to meet different product requirements.

[0023] As can be seen from Figure 2, the first conductive layer 140 extends outward from each light-emitting diode element 130 in the direction parallel to the conductive substrate 110, and a second conductive layer 160 is formed on the extension path of the first conductive layer 140. In other words, the shape and position of the light-emitting diode element 130, the first conductive layer 140 and the second conductive layer 160 of the light-emitting diode package structure 100 disclosed herein can be adjusted according to requirements, and therefore the present disclosure is not limited to the structure disclosed in the figures.

[0024] The light-emitting diode package structure 100 may further include a protective layer 170, which can connect to the second conductive layer 160, such that the second conductive layer 160 is located between the second insulating layer 150 and the protective layer 170. In this way, the protective layer 170 can protect the second conductive layer 160, thereby reducing the wear and tear of the second conductive layer 160.

[0025] Please refer to Figure 3, which is a flowchart of the steps of the manufacturing method 200 of the light-emitting diode packaging structure according to one embodiment of the present disclosure. The manufacturing method 200 of the light-emitting diode packaging structure includes steps 210, 220, 230, 240, 250, 260 and 270.

[0026] Please refer to Figures 4A, 4B, 4C, 4D, 4E, 4F, 4G, and 4H. Figures 4A to 4H are cross-sectional schematic diagrams of the manufacturing method 200 for the light-emitting diode (LED) package structure at various process stages. Step 210 involves disposing a plurality of LED elements 130 on a surface of a conductive substrate 110, with one light-emitting surface of each LED element 130 facing the conductive substrate 110, wherein the conductive substrate 110 is a transparent conductive substrate. The surface of the conductive substrate 110 connected to the LED elements 130 may have a conductive structure to provide circuit conduction for the LED elements 130.

[0027] Step 220 involves forming a first insulating layer 120 on the surface of the conductive substrate 110, and embedding the light-emitting diode element 130 in the first insulating layer 120. For example, after the light-emitting diode element 130 is disposed, an insulating material can be coated and cured to form the first insulating layer 120, but the present disclosure is not limited to the above process.

[0028] Step 230 involves forming a plurality of first through holes 121 in the first insulating layer 120, with a connection surface of each light-emitting diode element 130 exposed in the corresponding first through hole 121. The first through hole 121 can be formed by a photolithography process, and the first through hole 121 can generally be in the shape of a groove to facilitate subsequent material deposition in the first through hole 121.

[0029] Step 240 involves forming a first conductive layer 140, which connects the first insulating layer 120 to the connection surfaces of each light-emitting diode element 130, and the first insulating layer 120 is located between the first conductive layer 140 and the conductive substrate 110. For example, the first conductive layer 140 can be formed by a sputtering process or a chemical plating process, but the present disclosure is not limited to the above processes.

[0030] Step 250 involves forming a second insulating layer 150, such that the second insulating layer 150 connects to the first conductive layer 140, and the first conductive layer 140 is located between the first insulating layer 120 and the second insulating layer 150. For example, an insulating material may be coated and cured to form the second insulating layer 150, but this disclosure is not limited to the above process.

[0031] Step 260 involves forming a plurality of second vias 151 in the second insulating layer 150, exposing a portion of the first conductive layer 140 in the second vias 151. The second vias 151 can be formed by photoresist development technology, and the second vias 151 can generally be in the shape of a groove to facilitate subsequent material deposition in the second vias 151.

[0032] Step 270 involves disposing a second conductive layer 160 in the second via 151, and connecting the second conductive layer 160 to the first conductive layer 140 to obtain a light-emitting diode packaging structure 100. For example, the second conductive layer 160 can be formed by a sputtering process or a chemical plating process, but the present disclosure is not limited to the above processes.

[0033] It should be noted that the conductive substrate 110, the first insulating layer 120, the light-emitting diode element 130, the first conductive layer 140, the second insulating layer 150 and the second conductive layer 160 manufactured by the manufacturing method 200 of the light-emitting diode package structure have the same or similar structure or size as the aforementioned light-emitting diode package structure 100, so they will not be described again.

[0034] Furthermore, the manufacturing method 200 of the light-emitting diode package structure may further include forming a protective layer 170, which can be connected to the second conductive layer 160 and the second conductive layer 160 is located between the second insulating layer 150 and the protective layer 170, thereby protecting the second insulating layer 150.

[0035] In summary, the light-emitting diode packaging structure and manufacturing method disclosed herein, by selecting a transparent conductive substrate and configuring a first through hole and a second through hole, thereby adjusting the position of the light-emitting diode element, the first conductive layer and the second conductive layer, as well as the light emission direction of the light-emitting diode element, is beneficial to simplifying the process and improving the convenience of adjusting the structural configuration. This enables the light-emitting diode packaging structure to have good light emission effect, and the light-emitting diode packaging structure disclosed herein can still maintain good transparency when not displayed.

[0036] Although the present disclosure has been disclosed above with reference to embodiments, it is not intended to limit the present disclosure. Anyone skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be determined by the appended claims. [Simplified Explanation of the Diagram]

[0037] Figure 1 is a cross-sectional schematic diagram of the light-emitting diode packaging structure according to an embodiment of the present disclosure; Figure 2 is a bottom view of the light-emitting diode packaging structure in Figure 1; Figure 3 is a flowchart of the manufacturing method of the light-emitting diode packaging structure according to an embodiment of the present disclosure; and Figures 4A, 4B, 4C, 4D, 4E, 4F, 4G and 4H are cross-sectional schematic diagrams of the manufacturing method of the light-emitting diode packaging structure at each process stage.

Claims

1. A light-emitting diode (LED) packaging structure, comprising: a conductive substrate; a first insulating layer disposed on a surface of the conductive substrate, the first insulating layer having a plurality of first through-holes; a plurality of LED elements embedded in the first insulating layer, each LED element having a light-emitting surface connected to the conductive substrate, and each LED element having a connecting surface exposed in a corresponding first through-hole; a first conductive layer connecting the first insulating layer to the connecting surface of each LED element, such that the first insulating layer is located between the first conductive layer and the conductive substrate; a second insulating layer connecting the first conductive layer, such that a portion of the first conductive layer is located between the first insulating layer and the second insulating layer, the second insulating layer having a plurality of second through-holes, and a portion of the first conductive layer being exposed in the second through-holes; and a second conductive layer disposed in the second through-holes and connected to the first conductive layer; wherein... The conductive substrate is a transparent conductive substrate.

2. The light-emitting diode packaging structure as claimed in claim 1, wherein the first insulating layer has a first thickness, and the first thickness is from 1 μm to 50 μm.

3. The light-emitting diode packaging structure as claimed in claim 1, wherein the second insulating layer has a second thickness, and the second thickness is from 1 μm to 50 μm.

4. The light-emitting diode packaging structure as claimed in claim 1, wherein each of the first through holes has a first central axis, each of the second through holes has a second central axis, each of the light-emitting diode elements has a width, and a distance between the first central axis and the corresponding second central axis is not greater than three times the width.

5. The light-emitting diode packaging structure as described in claim 1 further includes a protective layer connected to the second conductive layer, such that the second conductive layer is located between the second insulating layer and the protective layer.

6. A method for manufacturing a light-emitting diode (LED) package structure, comprising: disposing a plurality of LED elements on a surface of a conductive substrate, wherein a light-emitting surface of each LED element faces the conductive substrate; forming a first insulating layer on the surface of the conductive substrate, wherein the LED elements are embedded in the first insulating layer; forming a plurality of first through-holes in the first insulating layer, wherein a connection surface of each LED element is exposed in a corresponding first through-hole; forming a first conductive layer, wherein the first conductive layer connects the first insulating layer to the connection surface of each LED element, wherein the first insulating layer is located between the first conductive layer and the conductive substrate; and forming a second insulating layer, wherein the second insulating layer connects the first conductive layer, wherein a portion of the first conductive layer is located between the first insulating layer and the second insulating layer. A plurality of second vias are formed in the second insulating layer, exposing portions of the first conductive layer in the second vias; and a second conductive layer is disposed in the second vias, and the second conductive layer is connected to the first conductive layer, to obtain a light-emitting diode package structure; wherein... The conductive substrate is a transparent conductive substrate.

7. A method for manufacturing a light-emitting diode packaging structure as claimed in claim 6, wherein the first insulating layer has a first thickness, and the first thickness is from 1 μm to 50 μm.

8. A method for manufacturing a light-emitting diode packaging structure as claimed in claim 6, wherein the second insulating layer has a second thickness, and the second thickness is from 1 μm to 50 μm.

9. A method for manufacturing a light-emitting diode (LED) package structure as claimed in claim 6, wherein each of the first through holes has a first central axis, each of the second through holes has a second central axis, each LED element has a width, and a distance between the first central axis and the corresponding second central axis is not greater than three times the width.

10. The method of manufacturing a light-emitting diode package structure as claimed in claim 6 further includes forming a protective layer that connects to the second conductive layer and positions the second conductive layer between the second insulating layer and the protective layer.

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