Light emitting device and light emitting device substrate

Abstract

A light emitting device including a reflective layer, a transflective layer, a first light emitting structure layer, a second light emitting structure layer and a third light emitting structure layer is provided. The reflective layer has a reflective surface. The transflective layer is disposed on one side of the reflective surface of the reflective layer, and has a transflective surface facing the reflective surface. The first light emitting structure layer is disposed between the reflective layer and the transflective layer, and is used to emit a first color light. The second light emitting structure layer is disposed between the first light emitting structure layer and the transflective layer, and is used to emit a second color light. The third light emitting structure layer is disposed between the second light emitting structure layer and the transflective layer, and is used to emit a third color light. The colors of the first color light, the second color light and the third color light are different from each other. A distance between the reflective surface and the transflective surface is greater than or equal to

Description

[Technical Field]

[0001] The present invention relates to an electronic component and a substrate, and more particularly to a light-emitting element and a light-emitting element substrate. [Previous Technology]

[0002] Compared to organic light-emitting diode (OLED) displays, micro light-emitting diode (Micro LED) displays not only have excellent optical performance (such as high color saturation, fast response speed and high contrast), but also have the advantages of low power consumption and long material lifespan, thus becoming the focus of development in related industries.

[0003] However, the refractive index of the epitaxial structure of current micro-light-emitting diodes (e.g., 2.4~3.6) is significantly higher than that of organic light-emitting diodes (e.g., 1.7), resulting in a significantly larger light emission angle range for micro-light-emitting diodes than for organic light-emitting diodes. Consequently, the forward light emission efficiency and light emission directionality of current micro-light-emitting diodes are relatively poor. [Summary of the Invention]

[0004] The present invention provides a light-emitting element and a light-emitting element substrate, which have better light emission directionality.

[0005] The light-emitting element of the present invention includes a reflective layer, a transmissive-reflective layer, a first light-emitting structure layer, a second light-emitting structure layer, and a third light-emitting structure layer. The reflective layer has a reflective surface. The transmissive-reflective layer is disposed on one side of the reflective surface of the reflective layer and has a transmissive-reflective surface facing the reflective surface. The first light-emitting structure layer is disposed between the reflective layer and the transmissive-reflective layer and is used to emit a first color light. The second light-emitting structure layer is disposed between the first light-emitting structure layer and the transmissive-reflective layer and is used to emit a second color light. The third light-emitting structure layer is disposed between the second light-emitting structure layer and the transmissive-reflective layer and is used to emit a third color light. The colors of the first color light, the second color light, and the third color light are different from each other. The distance between the reflective surface and the transmissive-reflective surface is greater than or equal to 612 nm.

[0006] The light-emitting element substrate of the present invention includes a substrate and a plurality of light-emitting elements. These light-emitting elements are electrically bonded to the substrate and each includes a reflective layer, a transmissive-reflective layer, a first light-emitting structure layer, a second light-emitting structure layer, and a third light-emitting structure layer. The reflective layer has a reflective surface. The transmissive-reflective layer is disposed on one side of the reflective surface of the reflective layer and has a transmissive-reflective surface facing the reflective surface. The first light-emitting structure layer is disposed between the reflective layer and the transmissive-reflective layer and is used to emit a first color of light. The second light-emitting structure layer is disposed between the first light-emitting structure layer and the transmissive-reflective layer and is used to emit a second color of light. The third light-emitting structure layer is disposed between the second light-emitting structure layer and the transmissive-reflective layer and is used to emit a third color of light. The colors of the first color of light, the second color of light, and the third color of light are different from each other. The distance between the reflective surface and the transmissive-reflective surface is greater than or equal to 612 nm.

[0007] Based on the above, in a light-emitting element and light-emitting element substrate of an embodiment of the present invention, the space between the reflective layer and the transflective layer constitutes an optical resonant cavity, and three light-emitting structural layers for emitting three different colors of light are provided. Since the distance between the reflective layer and the transflective layer (i.e., the resonant cavity length) is at least equal to 612 nm, the optical resonant cavity has at least three resonant wavelengths corresponding to the three colors of light, which helps to simultaneously improve the light emission directionality of these three colors of light and simplify the manufacturing process of the light-emitting element.

Implementation Method

[0008] As used herein, “about,” “approximately,” “essentially,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, as used herein, “about,” “approximately,” “essentially,” or “substantially” may be used to select a more acceptable range of deviations or standard deviations depending on the nature of the measurement, the cutting nature, or other properties, and may not apply to all properties with a single standard deviation.

[0009] In the accompanying drawings, the thicknesses of layers, films, panels, regions, etc., are enlarged for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it may be directly on or connected to the other element, or intermediate elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected" to another element, no intermediate elements are present. As used herein, "connection" may refer to a physical and / or electrical connection. Furthermore, an "electrical connection" may mean the presence of other elements between two elements.

[0010] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.

[0011] FIG1 is a cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention. FIG2A is an enlarged schematic diagram of the tunnel junction of FIG1. ​​FIG2B is an enlarged schematic diagram of another embodiment of the tunnel junction of FIG1. ​​FIG3A is the resonance spectrum when the distance between the reflective surface and the transmissive surface of FIG1 is 612 nm. FIG3B is the resonance spectrum when the distance between the reflective surface and the transmissive surface of FIG1 is 1168 nm. FIG3C is the resonance spectrum when the distance between the reflective surface and the transmissive surface of FIG1 is 1720 nm. FIG4 is a distribution diagram of multiple distances between the reflective surface and the transmissive surface of FIG1, which can form at least three resonant wavelengths. FIG5 is a light emission distribution diagram of the light-emitting element of FIG1.

[0012] Referring to Figure 1, the light-emitting element 100 includes a reflective layer RFL, a transmissive-reflective layer TFL, a first light-emitting structure layer 121, a second light-emitting structure layer 122, and a third light-emitting structure layer 123. The reflective layer RFL has reflective surfaces RFLs. The transmissive-reflective layer TFL is disposed on one side of the reflective surfaces RFLs of the reflective layer RFL and has transmissive-reflective surfaces TFLs facing the reflective surfaces RFLs. In this embodiment, the transmittance and reflectance of the transmissive-reflective layer TFL for visible light are, for example, 50% and 50%, respectively, but are not limited thereto. Therefore, the side of the light-emitting element 100 with the transmissive-reflective layer TFL is its light-emitting side.

[0013] In this embodiment, the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123 are stacked between the reflective layer RFL and the transmissive layer TFL along the normal direction (e.g., direction Z) of the reflective surface RFLs or the transmissive surface TFLs. More specifically, the first light-emitting structure layer 121 is disposed between the reflective layer RFL and the transmissive layer TFL and is used to emit a first color light L1. The second light-emitting structure layer 122 is disposed between the first light-emitting structure layer 121 and the transmissive layer TFL and is used to emit a second color light L2. The third light-emitting structure layer 123 is disposed between the second light-emitting structure layer 122 and the transmissive layer TFL and is used to emit a third color light L3.

[0014] The colors of the first color light L1, the second color light L2, and the third color light L3 are different from each other. For example, in this embodiment, the first color light L1, the second color light L2, and the third color light L3 can be red light, green light, and blue light, respectively, with wavelengths of 630 nm, 530 nm, and 460 nm, respectively, but are not limited thereto.

[0015] In detail, the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123 may each include an active layer AL, a first type semiconductor layer SCL1, and a second type semiconductor layer SCL2, wherein the active layer AL is disposed between the first type semiconductor layer SCL1 and the second type semiconductor layer SCL2. In this embodiment, the first type semiconductor layer SCL1 of each light-emitting structure layer is disposed between the active layer AL and the reflective layer RFL, while the second type semiconductor layer SCL2 is disposed between the active layer AL and the transmissive-reflective layer TFL.

[0016] In this embodiment, the light-emitting element 100 is, for example, a micro light-emitting diode (micro-LED). For instance, the active layer AL may include alternating stacked multiple energy well layers (not shown) and multiple energy barrier layers (not shown), i.e., the active layer AL may be a multiple quantum wells (MQW) structure. In this embodiment, the material of the energy barrier layer is, for example, gallium nitride (GaN), and the material of the energy well layer is, for example, indium gallium nitride (InGaN), but is not limited thereto. In other embodiments, the materials of the energy well layer and the energy barrier layer may also be aluminum gallium indium phosphide (AlGaInP) or other suitable materials.

[0017] On the other hand, in this embodiment, the first type semiconductor layer SCL1 can be a p-type semiconductor layer (e.g., p-GaN), and the second type semiconductor layer SCL2 can be an n-type semiconductor layer (e.g., n-GaN). Since the carrier (i.e., electron) mobility of the n-type semiconductor layer is greater than that of the p-type semiconductor layer (i.e., hole) mobility, the thickness t2 of the second type semiconductor layer SCL2 in this embodiment can be greater than the thickness t1 of the first type semiconductor layer SCL1, but is not limited thereto. The aforementioned thickness is, for example, the thickness of the film layer along the normal direction of the reflective surface RFLs or the stacking direction of the multiple light-emitting structure layers (e.g., direction Z). Unless otherwise specified below, the thickness of the film layer is defined in this way, and its defining direction will not be described again.

[0018] Further, in this embodiment, the light-emitting element 100 may also be provided with multiple tunnel junctions (TJs), such as a first tunnel junction 131 and a second tunnel junction 132. For example, the first tunnel junction 131 is electrically connected between the first light-emitting structure layer 121 and the second light-emitting structure layer 122, while the second tunnel junction 132 is electrically connected between the second light-emitting structure layer 122 and the third light-emitting structure layer 123.

[0019] The first tunnel junction 131 and the second tunnel junction 132 can each be a stacked structure of multiple semiconductor layers. For example, the first tunnel junction 131 and the second tunnel junction 132 can each be a stacked structure of a p-type semiconductor layer SCLp (e.g., p-GaN), an intrinsic semiconductor layer SCLi (e.g., i-In 0.2Ga 0.8N), and an n-type semiconductor layer SCLn (e.g., n-GaN) (as shown in FIG. 2A), but are not limited thereto. In another embodiment, the first tunnel junction 131A and the second tunnel junction 132A can be a stacked structure of a p-type semiconductor layer SCLp (e.g., p-Al 0.3Ga 0.7N) and an n-type semiconductor layer SCLn (e.g., n-Al 0.3Ga 0.7N) (as shown in FIG. 2B). In yet another embodiment, the first tunnel junction 131 and the second tunnel junction 132 of the light-emitting element 100 can be replaced by a non-conductive layer, such as an intrinsic semiconductor layer (i-GaN).

[0020] In this embodiment, the transmissive-reflective layer TFL is, for example, a thinned silver layer (e.g., 10 nm) and directly electrically contacts the second type semiconductor layer SCL2 of the third light-emitting structure layer 123. Therefore, the transmissive-reflective layer TFL can also serve as the driving electrode of the light-emitting element 100. On the other hand, in this embodiment, the light-emitting element 100 may also include an electrode layer EL, disposed between the reflective layer RFL and the first type semiconductor layer SCL1 of the first light-emitting structure layer 121. The material of the electrode layer EL may include indium tin oxide (ITO) or other suitable transparent metal oxides. The material of the reflective layer RFL may include silver, aluminum, or other suitable high-reflectivity materials. In some embodiments, the reflective layer RFL may also be a distributed Bragg reflector (DBR).

[0021] When a voltage is applied to the transflective layer TFL and the electrode layer EL, the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123 simultaneously emit a first color light L1, a second color light L2, and a third color light L3. More specifically, the light-emitting element 100 in this embodiment is, for example, a vertical type light-emitting element, but is not limited thereto.

[0022] It should be noted that the space between the reflecting surfaces RFLs of the reflective layer RFL and the transmissive surfaces TFLs of the transmissive layer TFL can constitute the optical resonant cavity of the light-emitting element 100. Without considering the energy loss when light is reflected from the reflecting surfaces RFLs and assuming that the light is incident on both the reflecting surfaces RFLs and TFLs in a forward direction, the relationship between the resonant wavelength λ and its optical length L of the aforementioned optical resonant cavity approximately satisfies the following equation: mλ = 2L, where m is the resonance order. That is, the resonant wavelength λ can be approximately twice the value of the optical length L. The optical length L satisfies the following equation: where N is the number of film layers between the reflecting surfaces RFLs and TFLs, ni is the refractive index of the i-th film layer, and ti is the thickness of the i-th film layer.

[0023] Figure 3A shows the resonance spectrum when the distance d (i.e., the resonant cavity length) between the reflecting surfaces RFLs and the transmissive surfaces TFLs along the normal direction (e.g., direction Z) of the reflecting surfaces RFLs is 612 nm, where the resonance orders m corresponding to the resonance wavelengths of 460 nm, 530 nm, and 630 nm are 7, 6, and 5, respectively. That is, when the distance d is 612 nm, the first color light L1, the second color light L2, and the third color light L3 emitted by the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123 in Figure 1 can all resonate within the resonant cavity formed between the reflecting surfaces RFLs and the transmissive surfaces TFLs, which helps to simultaneously improve the light emission directionality of these three colors of light. On the other hand, by using a single resonant cavity design to achieve the resonance requirements of multiple colors of light, the manufacturing process of the light-emitting element 100 can also be simplified.

[0024] Figures 3B and 3C show the resonance spectra when the distance d (i.e., the resonant cavity length) between the reflecting surfaces RFLs and the transmissive surfaces TFLs is 1168 nm and 1720 nm, respectively. As can be seen from Figures 3B and 3C, at these distances d, the resonant cavity can have more resonant wavelengths in the visible light band, including the aforementioned resonant wavelengths of 460 nm, 530 nm, and 630 nm. Furthermore, when the distance d is 2270 nm, 2826 nm, and 3382 nm, the resonant cavity can also have the aforementioned resonant wavelengths of 460 nm, 530 nm, and 630 nm. More specifically, in this embodiment, the distance d between the reflecting surfaces RFLs of the reflecting layer RFL and the transmissive surfaces TFLs of the transmissive layer TFL can satisfy the following relationship: d = a × 553.54 nm + 58.93 nm, where a is a positive integer.

[0025] It should be noted that the uniformity of the film formed by the deposition process varies. For example, the film uniformity of chemical vapor deposition (CVD) is affected by factors such as chamber pressure, process temperature, process gas flow rate, or stage rotation speed. Therefore, the aforementioned distance d can satisfy the following relationship: (a×553.54 nm+58.93 nm)*90% ≤ d ≤ (a×553.54 nm+58.93 nm)*110%. Preferably, the distance d satisfies the following relationship: (a×553.54 nm+58.93 nm)*95% ≤ d ≤ (a×553.54 nm+58.93 nm)*105%.

[0026] Figure 4 shows the light emission distribution DT1 of the light-emitting element 100 in Figure 1, the light emission distribution DT2 of a conventional micro light-emitting diode, and the light emission distribution DT3 of a conventional organic light-emitting diode. It should be noted that the luminance (i.e., the radial value in the figure) of each light emission distribution in Figure 4 at different viewing angles (i.e., values ​​in the circumferential direction) is a normalized value relative to its direct viewing angle luminance. Therefore, it only presents the directionality of the light distribution; the relationship between the luminance of different light emission distributions at the same viewing angle has no substantial meaning.

[0027] As shown in Figure 4, the light emission angle range of the current micro-LEDs (as shown in the light emission distribution DT2) is significantly larger than that of the current organic LEDs (as shown in the light emission distribution DT3), resulting in poorer forward light emission efficiency and light emission directivity of the current micro-LEDs compared to the current organic LEDs. However, in this embodiment, through the aforementioned resonant cavity design, the light emission directivity of the light-emitting element 100 in Figure 1 (as shown in the light emission distribution DT1) can be significantly improved compared to the current micro-LEDs, and even approach the performance of the current organic LEDs.

[0028] Other embodiments will be listed below to illustrate this disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and they will not be repeated below.

[0029] FIG5 is a cross-sectional schematic diagram of a light-emitting element substrate according to an embodiment of the present invention. Referring to FIG5, the light-emitting element substrate 10 includes a substrate 50 and a plurality of light-emitting elements 100 electrically bonded to the substrate 50. In this embodiment, the substrate 50 may be a driving circuit board having a plurality of pixel structures (not shown) and a plurality of signal lines (not shown). The plurality of light-emitting elements 100 may be bonded to a plurality of bonding pads (not shown) on the substrate 50 via a plurality of bonding layers BL, and are electrically connected to the substrate 50.

[0030] Since the stacked design of the light-emitting element 100 in this embodiment is the same as that of the light-emitting element 100 in FIG1, please refer to the relevant paragraphs of the foregoing embodiment for detailed description, and will not be repeated here.

[0031] It should be noted that in this embodiment, each of the plurality of light-emitting elements 100 has a filter layer on the side of the transmissive reflective layer TFL facing away from the reflective layer RFL. For example, a filter layer FL1 suitable for allowing the first color light L1 to pass through is provided above the light-emitting element 101, a filter layer FL2 suitable for allowing the second color light L2 to pass through is provided above the light-emitting element 102, and a filter layer FL3 suitable for allowing the third color light L3 to pass through is provided above the light-emitting element 103. That is, the filter colors of the filter layers FL1, FL2, and FL3 are different from each other, for example, red, green, and blue respectively, but not limited to this.

[0032] However, the present invention is not limited thereto. In other embodiments, a filter layer may not be provided above some of the light-emitting elements on the light-emitting element substrate. The number and type of filter layers can be adjusted according to actual application requirements.

[0033] FIG6 is a cross-sectional schematic diagram of a light-emitting element substrate according to another embodiment of the present invention. Referring to FIG6, the difference between the light-emitting element substrate 10A of this embodiment and the light-emitting element substrate 10 of FIG5 is that the thickness design of the electrode layer of the light-emitting element is different. Specifically, in this embodiment, in order to optimize the resonant cavity conditions required for different colors of light, such as the optical length of the resonant cavity, the electrode layers of light-emitting elements 101A, 102A and 103A with different filter layers can have different thicknesses.

[0034] For example, the thickness tb of the electrode layer ELb of the light-emitting element 102A with the filter layer FL2 may be less than the thickness ta of the electrode layer ELa of the light-emitting element 101A with the filter layer FL1, and greater than the thickness tc of the electrode layer ELc of the light-emitting element 103A with the filter layer FL3, but is not limited thereto.

[0035] FIG7 is a cross-sectional schematic diagram of a light-emitting element substrate according to another embodiment of the present invention. Referring to FIG7, the difference between the light-emitting element substrate 10B of this embodiment and the light-emitting element substrate 10 of FIG5 is that the thickness design of the second type semiconductor layer of the third light-emitting structure layer of the light-emitting element is different. Specifically, in this embodiment, in order to optimize the resonant cavity conditions required for different colors of light, such as the optical length of the resonant cavity, the second type semiconductor layer of the third light-emitting structure layer of the light-emitting elements 101B, 102B and 103B with different filter layers can have different thicknesses.

[0036] For example, the thickness tb” of the second type semiconductor layer SCL2b of the third light-emitting structure layer 123B of the light-emitting element 102B with filter layer FL2 may be less than the thickness ta” of the second type semiconductor layer SCL2a of the third light-emitting structure layer 123A of the light-emitting element 101B with filter layer FL1, and greater than the thickness tc” of the second type semiconductor layer SCL2c of the third light-emitting structure layer 123C of the light-emitting element 103B with filter layer FL3, but is not limited thereto.

[0037] FIG8 is a cross-sectional schematic diagram of a light-emitting element according to another embodiment of the present invention. Referring to FIG8, the difference between the light-emitting element 100A of this embodiment and the light-emitting element 100 of FIG1 is that the electrode arrangement is different. Specifically, in this embodiment, the light-emitting element 100A can be a flip-chip type light-emitting element.

[0038] For example, in this embodiment, the light-emitting element 100A may further include a common electrode CE, a first electrode E1, a second electrode E2, and a third electrode E3, and these electrodes are all disposed on the side of the reflective layer RFL facing away from the transmissive reflective layer TFL. The common electrode CE is electrically contacted with the second type semiconductor layer SCL2 of each of the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123. The first electrode E1, the second electrode E2, and the third electrode E3 are respectively electrically contacted with the first type semiconductor layer SCL1 of each of the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123.

[0039] To prevent the electrodes from contacting non-corresponding semiconductor layers, the light-emitting element 100A is further provided with an insulating layer INS to ensure the electrical independence of the first electrode E1, the second electrode E2, and the third electrode E3. Therefore, in this embodiment, the first light-emitting structure layer 121, the second light-emitting structure layer 122, and the third light-emitting structure layer 123 of the light-emitting element 100A can be individually enabled to emit the desired color light. In this embodiment, the light-emitting element 100A may also have a cover layer CAP on the side of the transflective layer TFL facing away from the reflective layer RFL, but this is not a limitation.

[0040] In summary, in the light-emitting element and light-emitting element substrate of one embodiment of the present invention, the space between the reflective layer and the transflective layer constitutes an optical resonant cavity, and three light-emitting structural layers for emitting three different colors of light are provided. Since the distance between the reflective layer and the transflective layer (i.e., the resonant cavity length) is at least 612 nm, the optical resonant cavity has at least three resonant wavelengths corresponding to the three colors of light, which helps to simultaneously improve the light emission directionality of these three colors of light and simplifies the manufacturing process of the light-emitting element. [Simplified Explanation of the Diagram]

[0041] FIG1 is a cross-sectional schematic diagram of a light-emitting element according to an embodiment of the present invention. FIG2A is an enlarged schematic diagram of the tunnel junction of FIG1. ​​FIG2B is an enlarged schematic diagram of another embodiment of the tunnel junction of FIG1. ​​FIG3A is the resonance spectrum of FIG1 when the distance between the reflecting surface and the transmitting surface is 612 nm. FIG3B is the resonance spectrum of FIG1 when the distance between the reflecting surface and the transmitting surface is 1168 nm. FIG3C is the resonance spectrum of FIG1 when the distance between the reflecting surface and the transmitting surface is 1720 nm. FIG4 is a light emission distribution diagram of the light-emitting element of FIG1. ​​FIG5 is a cross-sectional schematic diagram of a light-emitting element substrate according to an embodiment of the present invention. FIG6 is a cross-sectional schematic diagram of a light-emitting element substrate according to another embodiment of the present invention. FIG7 is a cross-sectional schematic diagram of a light-emitting element substrate according to yet another embodiment of the present invention. FIG8 is a cross-sectional schematic diagram of a light-emitting element according to another embodiment of the present invention.

Claims

1. A light-emitting element, comprising: A reflective layer having a reflective surface; A transmissive reflective layer is disposed on one side of the reflective surface of the reflective layer and has a transmissive reflective surface facing the reflective surface; A first light-emitting structure layer is disposed between the reflective layer and the transmissive-reflective layer, and is used to emit a first color light; a second light-emitting structure layer is disposed between the first light-emitting structure layer and the transmissive-reflective layer, and is used to emit a second color light; and a third light-emitting structure layer is disposed between the second light-emitting structure layer and the transmissive-reflective layer, and is used to emit a third color light, wherein the colors of the first color light, the second color light, and the third color light are different from each other, and the distance between the reflective surface and the transmissive-reflective surface is greater than or equal to 612 nm, and the distance between the reflective surface and the transmissive-reflective surface satisfies the following relationship: (a×553.54 nm+58.93 nm)*90% ≤ d ≤ (a×553.54 nm+58.93 nm)*110%, where a is a positive integer and d is the distance.

2. The light-emitting element as claimed in claim 1, wherein the distance between the reflective surface and the transmissive surface is less than or equal to 10,000 nm.

3. The light-emitting element as claimed in claim 1, wherein a filter layer is provided on the side of the transflective layer opposite to the reflective layer.

4. The light-emitting element as described in claim 1, further comprising: A first tunnel junction is disposed between the first light-emitting structural layer and the second light-emitting structural layer; And a second tunnel junction is disposed between the second light-emitting structural layer and the third light-emitting structural layer.

5. The light-emitting element as claimed in claim 1, wherein the first light-emitting structure layer, the second light-emitting structure layer, and the third light-emitting structure layer each comprise: One active layer; A first-type semiconductor layer is disposed between the active layer and the reflective layer; And a second type semiconductor layer is disposed between the active layer and the transflective layer, wherein the thickness of the second type semiconductor layer is greater than the thickness of the first type semiconductor layer.

6. The light-emitting element as described in claim 5, further comprising: A common electrode is disposed on the side of the reflective layer opposite to the transflective layer and electrically contacts the second type semiconductor layer of each of the first light-emitting structure layer, the second light-emitting structure layer and the third light-emitting structure layer; and a first electrode, a second electrode and a third electrode are disposed on the side of the reflective layer opposite to the transflective layer and electrically contact the first type semiconductor layer of each of the first light-emitting structure layer, the second light-emitting structure layer and the third light-emitting structure layer, wherein the first electrode, the second electrode and the third electrode are electrically independent of each other.

7. The light-emitting element as claimed in claim 1, further comprising: An electrode layer is disposed between the reflective layer and the first light-emitting structure layer, wherein the reflective layer and the electrode layer are adapted to be subjected to a voltage, causing the first light-emitting structure layer, the second light-emitting structure layer and the third light-emitting structure layer to emit the first color light, the second color light and the third color light respectively.

8. A light-emitting element substrate, comprising: One substrate; The substrate includes multiple light-emitting elements electrically bonded to it, each comprising: a reflective layer having a reflective surface; a transmissive-reflective layer disposed on one side of the reflective surface of the reflective layer and having a transmissive-reflective surface facing the reflective surface; a first light-emitting structure layer disposed between the reflective layer and the transmissive-reflective layer, for emitting a first color light; a second light-emitting structure layer disposed between the first light-emitting structure layer and the transmissive-reflective layer, for emitting a second color light; and a third light-emitting structure layer disposed between the second light-emitting structure layer and the transmissive-reflective layer, for emitting a third color light, wherein the colors of the first color light, the second color light, and the third color light are different from each other, and the distance between the reflective surface and the transmissive-reflective surface is greater than or equal to 612 nm, the distance between the reflective surface and the transmissive-reflective surface satisfying the following relationship: (a×553.54 nm+58.93 nm)*90% ≤ d ≤ (a×553.54 nm+58.93 nm) The value is calculated as nm)*110%, where a is a positive integer and d is the distance.

9. The light-emitting element substrate as claimed in claim 8, wherein the first light-emitting structure layer, the second light-emitting structure layer, and the third light-emitting structure layer each comprise: One active layer; A first-type semiconductor layer is disposed between the active layer and the reflective layer; And a second type semiconductor layer disposed between the active layer and the transflective layer, wherein the light-emitting elements include a first light-emitting element and a second light-emitting element, and the thickness of the second type semiconductor layer of the third light-emitting structure layer of the first light-emitting element is different from the thickness of the second type semiconductor layer of the third light-emitting structure layer of the second light-emitting element.

10. The light-emitting element substrate as claimed in claim 8, wherein each of the light-emitting elements further comprises: An electrode layer is disposed between the reflective layer and the first light-emitting structure layer, wherein the light-emitting elements include a first light-emitting element and a second light-emitting element, and the thickness of the electrode layer of the first light-emitting element is different from the thickness of the electrode layer of the second light-emitting element.

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