Semiconductor components and semiconductor devices

TW202638838APending Publication Date: 2026-09-16SONY SEMICON SOLUTIONS CORP
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Patent Information

Application Number
TW115100235
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-04
Filing Date
2026-01-05
Publication Date
2026-09-16

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Abstract

The purpose of this disclosure is to provide a semiconductor device that can stabilize the characteristics of an oxide semiconductor layer that serves as a channel. The semiconductor device provided by this disclosure is disposed within a wiring layer including an insulating film and wiring, and includes: an oxide semiconductor layer having a channel region at its center and a source region and a drain region at each of its ends; a gate insulating film covering the entire surface of the channel region; and a gate electrode covering the entire surface of the channel region through the gate insulating film.
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