Method for forming bumps on substrate
TW202638841APending Publication Date: 2026-09-16SKYTECH
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Patent Information
- Application Number
- TW114108190
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-05
- Publication Date
- 2026-09-16
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Figure TWG2TA001075604_001 
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Figure TWG2TA001075604_003
Abstract
This disclosure is a method for forming bumps on a substrate, comprising the following steps: providing a substrate, wherein a surface of the substrate has at least one recess; forming a first metal layer on the surface of the substrate and filling the recesses on the substrate with the first metal layer; forming a second metal layer on the first metal layer; disposing at least one bump on a partial region of the second metal layer; performing a plasma etch on the second metal layer not covered by the bumps; and removing the first metal layer not covered by the bumps and the first metal layer located within the recesses using an etchant. The method of the disclosure can effectively remove metal from the interior of the recesses on the substrate and can prevent damage to the bump structures on the substrate during the etching process.
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