Atomic layer deposition with carbon inhibition profile tuning

TW202638847APending Publication Date: 2026-09-16APPLIED MATERIALS INC
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114138552
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-06
Filing Date
2025-10-07
Publication Date
2026-09-16

Smart Images

  • Figure TWG2TA001076299_001
    Figure TWG2TA001076299_001
  • Figure TWG2TA001076299_002
    Figure TWG2TA001076299_002
  • Figure TWG2TA001076299_003
    Figure TWG2TA001076299_003
Patent Text Reader

Abstract

Exemplary methods of semiconductor processing may include i) performing a carbon inhibition operation on a substrate disposed within a processing region of a semiconductor processing chamber. A layer of material may be disposed on the substrate. The layer of material may define one or more features characterized by an aspect ratio of greater than or about
Need to check novelty before this filing date? Find Prior Art